Evidence of the role of defects near the injecting interface in determining SiO2 breakdown

P. Olivo; B. Ricco; Thao N. Nguyen; T. S. Kuan; S. J. Jeng

doi:10.1063/1.98925

Evidence of the role of defects near the injecting interface in determining SiO₂ breakdown

P. Olivo
, B. Ricco
, Thao N. Nguyen
, T. S. Kuan
, S. J. Jeng

Physics

University at Albany

IBM

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Experimental results on oxide breakdown in thin insulator metal-oxide-semiconductor structures are presented to show that at a microscopic level breakdown is related to defects located near the injecting interface. In addition, breakdown is found to be almost independent of electron fluence.

Original language	English
Pages (from-to)	2245-2247
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	26
DOIs	https://doi.org/10.1063/1.98925
State	Published - 1987

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@article{b628d7c229f54ba1af3c327ad778e44b,

title = "Evidence of the role of defects near the injecting interface in determining SiO2 breakdown",

abstract = "Experimental results on oxide breakdown in thin insulator metal-oxide-semiconductor structures are presented to show that at a microscopic level breakdown is related to defects located near the injecting interface. In addition, breakdown is found to be almost independent of electron fluence.",

author = "P. Olivo and B. Ricco and Nguyen, \{Thao N.\} and Kuan, \{T. S.\} and Jeng, \{S. J.\}",

year = "1987",

doi = "10.1063/1.98925",

language = "English",

volume = "51",

pages = "2245--2247",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "26",

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T1 - Evidence of the role of defects near the injecting interface in determining SiO2 breakdown

AU - Olivo, P.

AU - Ricco, B.

AU - Nguyen, Thao N.

AU - Kuan, T. S.

AU - Jeng, S. J.

PY - 1987

Y1 - 1987

N2 - Experimental results on oxide breakdown in thin insulator metal-oxide-semiconductor structures are presented to show that at a microscopic level breakdown is related to defects located near the injecting interface. In addition, breakdown is found to be almost independent of electron fluence.

AB - Experimental results on oxide breakdown in thin insulator metal-oxide-semiconductor structures are presented to show that at a microscopic level breakdown is related to defects located near the injecting interface. In addition, breakdown is found to be almost independent of electron fluence.

UR - https://www.scopus.com/pages/publications/0008444515

U2 - 10.1063/1.98925

DO - 10.1063/1.98925

M3 - Article

SN - 0003-6951

VL - 51

SP - 2245

EP - 2247

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Evidence of the role of defects near the injecting interface in determining SiO₂ breakdown

Abstract

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