Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition

J. F. Muth; R. M. Kolbas; A. K. Sharma; S. Oktyabrsky; J. Narayan

doi:10.1063/1.370601

Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition

J. F. Muth
, R. M. Kolbas
, A. K. Sharma
, S. Oktyabrsky
, J. Narayan

Nanoscale Science and Engineering

University at Albany

North Carolina State University

Research output: Contribution to journal › Article › peer-review

360 Scopus citations

Abstract

Pulsed laser deposition grown high quality single crystal epitaxial ZnO thin films on c-plane sapphire substrates are investigated based on their optical properties. Results showed that optical and electrical properties are improved when annealing the films in oxygen. Transmission measurements and photoluminescence determined the absorption coefficient, band gap, and exciton binding energies.

Original language	English
Pages (from-to)	7884-7887
Number of pages	4
Journal	Journal of Applied Physics
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.370601
State	Published - Jun 1999

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@article{e7eb0d4215ff4c77849237c57604ce06,

title = "Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition",

abstract = "Pulsed laser deposition grown high quality single crystal epitaxial ZnO thin films on c-plane sapphire substrates are investigated based on their optical properties. Results showed that optical and electrical properties are improved when annealing the films in oxygen. Transmission measurements and photoluminescence determined the absorption coefficient, band gap, and exciton binding energies.",

author = "Muth, \{J. F.\} and Kolbas, \{R. M.\} and Sharma, \{A. K.\} and S. Oktyabrsky and J. Narayan",

year = "1999",

month = jun,

doi = "10.1063/1.370601",

language = "English",

volume = "85",

pages = "7884--7887",

journal = "Journal of Applied Physics",

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T1 - Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition

AU - Muth, J. F.

AU - Kolbas, R. M.

AU - Sharma, A. K.

AU - Oktyabrsky, S.

AU - Narayan, J.

PY - 1999/6

Y1 - 1999/6

N2 - Pulsed laser deposition grown high quality single crystal epitaxial ZnO thin films on c-plane sapphire substrates are investigated based on their optical properties. Results showed that optical and electrical properties are improved when annealing the films in oxygen. Transmission measurements and photoluminescence determined the absorption coefficient, band gap, and exciton binding energies.

AB - Pulsed laser deposition grown high quality single crystal epitaxial ZnO thin films on c-plane sapphire substrates are investigated based on their optical properties. Results showed that optical and electrical properties are improved when annealing the films in oxygen. Transmission measurements and photoluminescence determined the absorption coefficient, band gap, and exciton binding energies.

UR - https://www.scopus.com/pages/publications/0032607768

U2 - 10.1063/1.370601

DO - 10.1063/1.370601

M3 - Article

SN - 0021-8979

VL - 85

SP - 7884

EP - 7887

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition

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