Skip to main navigation Skip to search Skip to main content

Fabrication of long lengths of epitaxial buffer layers on biaxially textured nickel substrates using a continuous reel-to-reel dip-coating unit

  • M. Parans Paranthaman
  • , Thomas G. Chirayil
  • , Fred A. List
  • , Xingtian Cui
  • , Amit Goyal
  • , Dominic F. Lee
  • , Eliot D. Specht
  • , Patrick M. Martin
  • , Robert K. Williams
  • , Donald M. Kroeger
  • , Jonathan S. Morrell
  • , David B. Beach
  • , Ron Feenstra
  • , David K. Christen

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

A low-cost, nonvacuum, solution precursor route has been developed to produce epitaxial oxide buffer layers of Eu2O3 or La2Zr2O7 on biaxially textured Ni (100) tapes. A reel-to-reel continuous dip-coating unit consisting of a constant-tension tape transport system attached to a controlled atmosphere furnace was fabricated. Nickel tapes were pulled through a 2-methoxyethanol solution of europium methoxyethoxide/acetate or lanthanum zirconium methoxyethoxide. The double-sided dip-coated tapes were then annealed in a preheated furnace at 1000°-1100 °C with a high flow rate of Ar/H2 (4%) gas. The dip-coated buffers were dense, continuous, crack-free, and epitaxial with a single cube texture. A critical current (Jc) of >1 MA/cm2 at 77 K and self-field was obtained for YBa2Cu3O7-δ (YBCO) films with a layer sequence of YBCO (ex situ BaF2 process)/CeO2 (sputtered)/YSZ (sputtered)/Eu2O3 (dip-coated)/nickel. We have produced 1-2 m lengths of epitaxial buffer layers on textured nickel substrates using a nonvacuum process for the first time.

Original languageEnglish
Pages (from-to)273-278
Number of pages6
JournalJournal of the American Ceramic Society
Volume84
Issue number2
DOIs
StatePublished - 2001

Fingerprint

Dive into the research topics of 'Fabrication of long lengths of epitaxial buffer layers on biaxially textured nickel substrates using a continuous reel-to-reel dip-coating unit'. Together they form a unique fingerprint.

Cite this