@inproceedings{85bf2834488e41039c88fc21a1f0c866,
title = "Fabrication of NbO2 based IMT Selector Devices via a 300mm Based Memory Test Vehicle",
abstract = "The demand for differentiated devices in the backend-of-line increases necessitates the need for a test vehicle that enables the integration and electrical characterization of such devices. An Insulator-Metal Transition based NbO2 device was integrated onto the NY CREATES/UAlbany memory test vehicle (MTV) utilizing a 65nm process technology to fabricate nanoscale devices with a footprint down to 120x120 nm2. NbO2, the metastable allotrope of niobium oxide, was deposited onto coupons diced out of the 300mm MTV. This occurred in an oxygen-controlled environment yielding phase-pure NbO2 after a 750 °C crystallization anneal. An endurance of at least 25x106 cycles was demonstrated with an Roff/Ron ratio above 100 and an extrapolation towards >2000 with further device scaling.",
keywords = "CMOS+X test vehicle, IMT, Semiconductor, neuromorphic computing",
author = "Karsten Beckmann and Martin Rodgers and Theodore Wallach and Ross Paries and Nathaniel Cady",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 37th IEEE International Conference on Microelectronic Test Structures, ICMTS 2025 ; Conference date: 24-03-2024 Through 27-03-2024",
year = "2025",
doi = "10.1109/ICMTS63811.2025.11068920",
language = "English",
series = "IEEE International Conference on Microelectronic Test Structures",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "ICMTS 2025 - Proceedings of the 2025 IEEE 37th International Conference on Microelectronic Test Structures, ICMTS 2025",
}