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Failure modes and FEM analysis of power electronic packaging

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The development of power electronics technology is driven by the insatiate demand to control electrical power. The new power electronics devices make the volume of the converters a reduction of three to four orders of magnitude compared to their mercury arc predecessor. And the turn-on and turn-off time has decreased from the millisecond region to the microsecond region and even nanosecond depending on power level. The power range commanded by converters now extends from micro-VA to several hundreds of MVA. Among the new power devices, IGBT (Insulated gate bipolar transistor) devices are getting more acceptances and increasingly used in traction application such as locomotive, elevator, tram and subway. Thus the long-term reliability of IGBT is highly demanded In this paper the failure modes of power electronics devices especially IGBTs are reviewed. A FEM analysis of a multilayered IGBT packaging module under cyclic thermal loading is presented.

Original languageEnglish
Title of host publicationAdvances in Electronic Packaging; Electrical Design, Simulation, and Test, Mems, Materials and Processing, Modeling and Characterization
Pages417-428
Number of pages12
StatePublished - 2001
EventPacific Rim/International, Intersociety Electronic Packaging Technical/Business Conference and Exhibition - Kauai, Hi, United States
Duration: Jul 8 2001Jul 13 2001

Publication series

NameAdvances in Electronic Packaging
Volume1

Conference

ConferencePacific Rim/International, Intersociety Electronic Packaging Technical/Business Conference and Exhibition
Country/TerritoryUnited States
CityKauai, Hi
Period07/8/0107/13/01

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