Far-infrared magnetospeetroscopy of HgTe and Hg1-XMnX Te eptiayers grown by molecular-beam epitaxy

Far-infrared magnetotransmission experiments were performed on HgTe and Hg_1-xMn_x Te epilayers grown by molecular-beam epitaxy. The measurements were carried out in the Faraday and Voigt geometries, at fixed photon energies bctween 2.5 and 12.8 meV, in the temperature range 1.6 K < T < 200 K, in magnctic fields up to 6 T. The results were analyzed in terms of the Pidgeon-Brown model, with the spin-spin exchange interaction included for the case of Hg_1-x Mnx Te. It is found that both HgTe and Hg_{1 - x} Mn_x Te epilayers have excellent electronic properties, which compare favorably with the best quality intrinsic bulk crystals, and which show no effects of strain due to the lattice mismatch with the substrate.