Fermi Level Pinning with Sub-monolayer MeOx and Metal Gates

S. B. Samavedam; L. B. La; P. J. Tobin; B. White; C. Hobbs; L. R.C. Fonseca; A. A. Demkov; J. Schaeffer; E. Luckowski; A. Martinez; M. Raymond; D. Triyoso; D. Roan; V. Dhandapani; R. Garcia; S. G.H. Anderson; K. Moore; H. H. Tseng; C. Capasso; O. Adetutu; D. C. Gilmer; W. J. Taylor; R. Hegde; J. Grant

Fermi Level Pinning with Sub-monolayer MeOx and Metal Gates

S. B. Samavedam
, L. B. La
, P. J. Tobin
, B. White
, C. Hobbs
, L. R.C. Fonseca
, A. A. Demkov
, J. Schaeffer
, E. Luckowski
, A. Martinez
, M. Raymond
, D. Triyoso
, D. Roan
, V. Dhandapani
, R. Garcia
, S. G.H. Anderson
, K. Moore
, H. H. Tseng
, C. Capasso
, O. Adetutu

D. C. Gilmer, W. J. Taylor, R. Hegde, J. Grant

Physics

Binghamton University

Motorola
MOS 13
Microelectron./Phy. Sci. Laboratory

Research output: Contribution to journal › Conference article › peer-review

36 Scopus citations

Abstract

We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO ₂2, Al ₂O ₃ and HfO ₂ for the first time. The shifts in work-function agree in most cases with the MIGS theory if accurate theoretical parameters are used.

Original language	English
Pages (from-to)	307-310
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 2003
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: Dec 8 2003 → Dec 10 2003

Cite this

Samavedam, S. B., La, L. B., Tobin, P. J., White, B., Hobbs, C., Fonseca, L. R. C., Demkov, A. A., Schaeffer, J., Luckowski, E., Martinez, A., Raymond, M., Triyoso, D., Roan, D., Dhandapani, V., Garcia, R., Anderson, S. G. H., Moore, K., Tseng, H. H., Capasso, C., ... Grant, J. (2003). Fermi Level Pinning with Sub-monolayer MeOx and Metal Gates. Technical Digest - International Electron Devices Meeting, 307-310.

@article{f27b525071664d40a703e37389f5b772,

title = "Fermi Level Pinning with Sub-monolayer MeOx and Metal Gates",

abstract = "We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO 22, Al 2O 3 and HfO 2 for the first time. The shifts in work-function agree in most cases with the MIGS theory if accurate theoretical parameters are used.",

author = "Samavedam, \{S. B.\} and La, \{L. B.\} and Tobin, \{P. J.\} and B. White and C. Hobbs and Fonseca, \{L. R.C.\} and Demkov, \{A. A.\} and J. Schaeffer and E. Luckowski and A. Martinez and M. Raymond and D. Triyoso and D. Roan and V. Dhandapani and R. Garcia and Anderson, \{S. G.H.\} and K. Moore and Tseng, \{H. H.\} and C. Capasso and O. Adetutu and Gilmer, \{D. C.\} and Taylor, \{W. J.\} and R. Hegde and J. Grant",

year = "2003",

language = "English",

pages = "307--310",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

}

Samavedam, SB, La, LB, Tobin, PJ, White, B, Hobbs, C, Fonseca, LRC, Demkov, AA, Schaeffer, J, Luckowski, E, Martinez, A, Raymond, M, Triyoso, D, Roan, D, Dhandapani, V, Garcia, R, Anderson, SGH, Moore, K, Tseng, HH, Capasso, C, Adetutu, O, Gilmer, DC, Taylor, WJ, Hegde, R & Grant, J 2003, 'Fermi Level Pinning with Sub-monolayer MeOx and Metal Gates', Technical Digest - International Electron Devices Meeting, pp. 307-310.

TY - JOUR

T1 - Fermi Level Pinning with Sub-monolayer MeOx and Metal Gates

AU - Samavedam, S. B.

AU - La, L. B.

AU - Tobin, P. J.

AU - White, B.

AU - Hobbs, C.

AU - Fonseca, L. R.C.

AU - Demkov, A. A.

AU - Schaeffer, J.

AU - Luckowski, E.

AU - Martinez, A.

AU - Raymond, M.

AU - Triyoso, D.

AU - Roan, D.

AU - Dhandapani, V.

AU - Garcia, R.

AU - Anderson, S. G.H.

AU - Moore, K.

AU - Tseng, H. H.

AU - Capasso, C.

AU - Adetutu, O.

AU - Gilmer, D. C.

AU - Taylor, W. J.

AU - Hegde, R.

AU - Grant, J.

PY - 2003

Y1 - 2003

N2 - We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO 22, Al 2O 3 and HfO 2 for the first time. The shifts in work-function agree in most cases with the MIGS theory if accurate theoretical parameters are used.

AB - We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO 22, Al 2O 3 and HfO 2 for the first time. The shifts in work-function agree in most cases with the MIGS theory if accurate theoretical parameters are used.

UR - https://www.scopus.com/pages/publications/17644442946

M3 - Conference article

SN - 0163-1918

SP - 307

EP - 310

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Fermi Level Pinning with Sub-monolayer MeOx and Metal Gates

Abstract

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