FIELD AND CURRENT DOMAINS IN SILICON AT LOW TEMPERATURES.

O. G. Sarbey; L. F. Kurtenok; E. A. Movchan; V. V. Mitin; M. Asche

FIELD AND CURRENT DOMAINS IN SILICON AT LOW TEMPERATURES.

O. G. Sarbey
, L. F. Kurtenok
, E. A. Movchan
, V. V. Mitin
, M. Asche

Department of Electrical Engineering

University at Buffalo

Research output: Contribution to conference › Paper › peer-review

Abstract

In n-Si in the region of ndc static domains of high electric fields are observed. In the presence of high magnetic fields under the condition of S-type behavior current layers are obtained.

Original language	English
Pages	339-342
Number of pages	4
State	Published - 1979
Event	Pap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl Duration: Sep 4 1978 → Sep 8 1978

Conference

Conference	Pap from the Int Conf on the Phys of Semicond, 14th
City	Edinburgh, Scotl
Period	09/4/78 → 09/8/78

Cite this

@conference{590da9bee2784cd9b937b7739762c360,

title = "FIELD AND CURRENT DOMAINS IN SILICON AT LOW TEMPERATURES.",

abstract = "In n-Si in the region of ndc static domains of high electric fields are observed. In the presence of high magnetic fields under the condition of S-type behavior current layers are obtained.",

author = "Sarbey, \{O. G.\} and Kurtenok, \{L. F.\} and Movchan, \{E. A.\} and Mitin, \{V. V.\} and M. Asche",

year = "1979",

language = "English",

pages = "339--342",

note = "Pap from the Int Conf on the Phys of Semicond, 14th ; Conference date: 04-09-1978 Through 08-09-1978",

}

TY - CONF

T1 - FIELD AND CURRENT DOMAINS IN SILICON AT LOW TEMPERATURES.

AU - Sarbey, O. G.

AU - Kurtenok, L. F.

AU - Movchan, E. A.

AU - Mitin, V. V.

AU - Asche, M.

PY - 1979

Y1 - 1979

N2 - In n-Si in the region of ndc static domains of high electric fields are observed. In the presence of high magnetic fields under the condition of S-type behavior current layers are obtained.

AB - In n-Si in the region of ndc static domains of high electric fields are observed. In the presence of high magnetic fields under the condition of S-type behavior current layers are obtained.

UR - https://www.scopus.com/pages/publications/0018322502

M3 - Paper

SP - 339

EP - 342

T2 - Pap from the Int Conf on the Phys of Semicond, 14th

Y2 - 4 September 1978 through 8 September 1978

ER -

FIELD AND CURRENT DOMAINS IN SILICON AT LOW TEMPERATURES.

Abstract

Conference

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