Film properties of ALD HfO 2 and La 2O 3 gate dielectrics grown on Si with various pre-deposition treatments

D. H. Triyoso; R. I. Hegde; J. Grant; P. Fejes; R. Liu; D. Roan; M. Ramon; D. Werho; R. Rai; L. B. La; J. Baker; C. Garza; T. Guenther; B. E. White; P. J. Tobin

doi:10.1116/1.1773840

Film properties of ALD HfO ₂ and La ₂O ₃ gate dielectrics grown on Si with various pre-deposition treatments

D. H. Triyoso
, R. I. Hegde
, J. Grant
, P. Fejes
, R. Liu
, D. Roan
, M. Ramon
, D. Werho
, R. Rai
, L. B. La
, J. Baker
, C. Garza
, T. Guenther
, B. E. White
, P. J. Tobin

Physics

Binghamton University

Freescale Semiconductor

Research output: Contribution to journal › Article › peer-review

76 Scopus citations

Abstract

The film properties of ALD HFO ₂ and La ₂O ₃ in contact with silicon substrate were investigated. The gate dielectrics were formed using ALD in a cross-flow reactor, and film thickness was controlled by the number of deposition cycles. Cross-sectional TEM was obtained to examine the La ₂O ₃-Si interface, and MOSCAPs were fabricated using a platinum shadow mask technique to study the impact of the different pre-treatments on ALD dielectric's electrical characteristics. The results show that HfO ₂ is stable in contact with Si, and that various pre-deposition treatments result in films with good electrical and physical properties.

Original language	English
Pages (from-to)	2121-2127
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1773840
State	Published - Jul 2004

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Triyoso, D. H., Hegde, R. I., Grant, J., Fejes, P., Liu, R., Roan, D., Ramon, M., Werho, D., Rai, R., La, L. B., Baker, J., Garza, C., Guenther, T., White, B. E., & Tobin, P. J. (2004). Film properties of ALD HfO ₂ and La ₂O ₃ gate dielectrics grown on Si with various pre-deposition treatments. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22(4), 2121-2127. https://doi.org/10.1116/1.1773840

@article{a0b7cb11826946b19f9e90f140d5d36b,

title = "Film properties of ALD HfO 2 and La 2O 3 gate dielectrics grown on Si with various pre-deposition treatments",

abstract = "The film properties of ALD HFO 2 and La 2O 3 in contact with silicon substrate were investigated. The gate dielectrics were formed using ALD in a cross-flow reactor, and film thickness was controlled by the number of deposition cycles. Cross-sectional TEM was obtained to examine the La 2O 3-Si interface, and MOSCAPs were fabricated using a platinum shadow mask technique to study the impact of the different pre-treatments on ALD dielectric's electrical characteristics. The results show that HfO 2 is stable in contact with Si, and that various pre-deposition treatments result in films with good electrical and physical properties.",

author = "Triyoso, \{D. H.\} and Hegde, \{R. I.\} and J. Grant and P. Fejes and R. Liu and D. Roan and M. Ramon and D. Werho and R. Rai and La, \{L. B.\} and J. Baker and C. Garza and T. Guenther and White, \{B. E.\} and Tobin, \{P. J.\}",

year = "2004",

month = jul,

doi = "10.1116/1.1773840",

language = "English",

volume = "22",

pages = "2121--2127",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

Triyoso, DH, Hegde, RI, Grant, J, Fejes, P, Liu, R, Roan, D, Ramon, M, Werho, D, Rai, R, La, LB, Baker, J, Garza, C, Guenther, T, White, BE & Tobin, PJ 2004, 'Film properties of ALD HfO ₂ and La ₂O ₃ gate dielectrics grown on Si with various pre-deposition treatments', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 4, pp. 2121-2127. https://doi.org/10.1116/1.1773840

TY - JOUR

T1 - Film properties of ALD HfO 2 and La 2O 3 gate dielectrics grown on Si with various pre-deposition treatments

AU - Triyoso, D. H.

AU - Hegde, R. I.

AU - Grant, J.

AU - Fejes, P.

AU - Liu, R.

AU - Roan, D.

AU - Ramon, M.

AU - Werho, D.

AU - Rai, R.

AU - La, L. B.

AU - Baker, J.

AU - Garza, C.

AU - Guenther, T.

AU - White, B. E.

AU - Tobin, P. J.

PY - 2004/7

Y1 - 2004/7

N2 - The film properties of ALD HFO 2 and La 2O 3 in contact with silicon substrate were investigated. The gate dielectrics were formed using ALD in a cross-flow reactor, and film thickness was controlled by the number of deposition cycles. Cross-sectional TEM was obtained to examine the La 2O 3-Si interface, and MOSCAPs were fabricated using a platinum shadow mask technique to study the impact of the different pre-treatments on ALD dielectric's electrical characteristics. The results show that HfO 2 is stable in contact with Si, and that various pre-deposition treatments result in films with good electrical and physical properties.

AB - The film properties of ALD HFO 2 and La 2O 3 in contact with silicon substrate were investigated. The gate dielectrics were formed using ALD in a cross-flow reactor, and film thickness was controlled by the number of deposition cycles. Cross-sectional TEM was obtained to examine the La 2O 3-Si interface, and MOSCAPs were fabricated using a platinum shadow mask technique to study the impact of the different pre-treatments on ALD dielectric's electrical characteristics. The results show that HfO 2 is stable in contact with Si, and that various pre-deposition treatments result in films with good electrical and physical properties.

UR - https://www.scopus.com/pages/publications/4944259427

U2 - 10.1116/1.1773840

DO - 10.1116/1.1773840

M3 - Article

SN - 1071-1023

VL - 22

SP - 2121

EP - 2127

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Film properties of ALD HfO ₂ and La ₂O ₃ gate dielectrics grown on Si with various pre-deposition treatments

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