@inproceedings{ea9096a5bb1042e7922242c70a4e1e75,
title = "First demonstration of single-mode distributed feedback type-I GaSb cascade diode laser emitting near 2.9 μm",
abstract = "We demonstrate GaSb-based laterally-coupled distributed-feedback type-I cascade diode lasers emitting near 2.9 μm as potential sources for OH measurements. The laser heterostructures consist of two GaInAsSb quantum well stages in series separated by GaSb/AlSb/InAs tunnel junction and InAs/AlSb electron injectors. Single-mode emission is generated using second order lateral Bragg grating etched alongside narrow ridge waveguides. The lasers were fabricated into 2-mm-long devices, solder-mounted epi-up on copper submounts, and operate at room temperature. With an anti-reflection coating at the emission facet, the lasers exhibit a typical current threshold of 110 mA at 20 °C and emit more than 14 mW of output power. The Bragg wavelength temperature tuning rate was 0.29 nm/°C.",
keywords = "Diode lasers, Distributed-feedback, GaSb, Laser sensors, Single frequency, Type-I",
author = "Mathieu Fradet and Takashi Hosoda and Clifford Frez and Leon Shterengas and Stanley Sander and Siamak Forouhar and Gregory Belenky",
note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Novel In-Plane Semiconductor Lasers XV ; Conference date: 15-02-2016 Through 18-02-2016",
year = "2016",
doi = "10.1117/12.2213224",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Belyanin, \{Alexey A.\} and Smowton, \{Peter M.\}",
booktitle = "Novel In-Plane Semiconductor Lasers XV",
}