Flash MOS-HFET operational stability for power converter circuits

The enhancement mode metal oxide semiconductor heterojuntion field effect transistor with a flash gate stack (Flash MOS-HFET) device structure is demonstrated as the switching device in a boost converter circuit operating at 1 MHz. The Flash MOS-HFET device maintains a constant threshold voltage for the duration of circuit operation at temperatures up to 125 °C. This is the first report of Flash MOS-HFET operation at high temperature without charge loss over time resulting in negative threshold voltage shift. The Flash MOS-HFET structure therefore is not limited by charge loss and can be inserted into power electronic device circuits as a traditional enhancement mode device.