Flexible β-Ga ₂ O ₃ Nanomembrane Schottky Barrier Diodes

Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline β-Ga ₂ O ₃ nanomembranes (NMs). In order to realize flexible high power β-Ga ₂ O ₃ SBDs, sub-micron thick freestanding β-Ga ₂ O ₃ NMs are created from a bulk β-Ga ₂ O ₃ substrate and transfer-printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of β-Ga ₂ O ₃ NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible β-Ga ₂ O ₃ SBDs exhibit the record high critical breakdown field strength (E _c ) of 1.2 MV cm ⁻¹ in the flat condition and 1.07 MV cm ⁻¹ of E _c under the bending condition. Overall, flexible β-Ga ₂ O ₃ SBDs offer great promise for future flexible energy convergence systems and are expected to provide a much larger and more versatile platform to address a broader range of high-performance flexible applications.