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Fluctuations effects in the low temperature magnetoresistance of micron scale semiconductor junctions

  • J. P. Bird
  • , Y. Ochiai
  • , T. Onishi
  • , T. Kitatani
  • , M. Kawabe
  • , K. Ishibashi
  • , K. Ishibashi
  • , Y. Aoyagi
  • , S. Namba
  • University of Tsukuba

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We discuss the low temperature transport properties of small electrical devices defined using an electrostatic confinement technique. Electron beam lithography enables us to fabricate devices in which transport is intermediate between the pure ballistic and diffusive regimes. Fluctuations observed in the magnetoresistance exhibit a non universal scaling with sample size which we discuss in terms of the increased importance of sub band quantization in small semiconductor structures.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Institute of Physics Publishing Ltd
Pages167-170
Number of pages4
ISBN (Print)0750302259
StatePublished - 1992
EventProceedings of the International Workshop on Quantum Effect Physics, Electronics and Applications - Luxor, Egypt
Duration: Jan 6 1992Jan 10 1992

Publication series

NameInstitute of Physics Conference Series
Volume127

Conference

ConferenceProceedings of the International Workshop on Quantum Effect Physics, Electronics and Applications
CityLuxor, Egypt
Period01/6/9201/10/92

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