Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers

The formation mechanism and propagation behavior of a complex stacking fault (SF) in thick silicon carbide epitaxial layers was investigated using depth-resolved section X-ray topography and ultraviolet photoluminescence (UVPL) imaging. The SF is initiated in the substrate by deflection of a threading screw dislocation onto two basal half planes creating a Frank fault. This fault propagates into the epitaxial layer and interacts with several threading mixed dislocations, which creates both Frank and Shockley SFs on the same basal plane. UVPL images using different spectral filters show various SF type conversions occurring during propagation of the complex SF.