Formation of stacking faults and their correlation with flux pinning and critical current density in Sm-doped YBa2Cu3O 7-δ films

Sung Hun Wee; Eliot D. Specht; Claudia Cantoni; Yuri L. Zuev; Victor Maroni; Winnie Wong-Ng; Guangyao Liu; Timothy J. Haugan; Amit Goyal

doi:10.1103/PhysRevB.83.224520

Formation of stacking faults and their correlation with flux pinning and critical current density in Sm-doped YBa₂Cu₃O _7-δ films

Sung Hun Wee
, Eliot D. Specht
, Claudia Cantoni
, Yuri L. Zuev
, Victor Maroni
, Winnie Wong-Ng
, Guangyao Liu
, Timothy J. Haugan
, Amit Goyal

Department of Chemical and Biological Engineering

University at Buffalo

Oak Ridge National Laboratory
The University of Tennessee
Argonne National Laboratory
National Institute of Standards and Technology
Air Force Research Laboratory

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

A correlation between flux-pinning characteristics and stacking faults (SFs) formed by Sm substitution on Y and Ba sites was found in Sm-doped YBa ₂Cu₃O_7-δ films. It was confirmed that 223-type-SFs, Y₂Ba₂Cu₃O_x, composed of extra Y and O planes aligned parallel to the ab-planes formed via Sm substitution on the Y site and increased in number with increasing Sm doping on the Ba site. The number density of 223 SFs is correlated strongly with the enhancement in ab-plane-correlated flux pinning, resulting in a sharpening of the H||ab peak in the plot of critical current density versus magnetic field orientation.

Original language	English
Article number	224520
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	83
Issue number	22
DOIs	https://doi.org/10.1103/PhysRevB.83.224520
State	Published - Jun 29 2011

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10.1103/PhysRevB.83.224520

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Wee, S. H., Specht, E. D., Cantoni, C., Zuev, Y. L., Maroni, V., Wong-Ng, W., Liu, G., Haugan, T. J., & Goyal, A. (2011). Formation of stacking faults and their correlation with flux pinning and critical current density in Sm-doped YBa₂Cu₃O _7-δ films. Physical Review B - Condensed Matter and Materials Physics, 83(22), Article 224520. https://doi.org/10.1103/PhysRevB.83.224520

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title = "Formation of stacking faults and their correlation with flux pinning and critical current density in Sm-doped YBa2Cu3O 7-δ films",

abstract = "A correlation between flux-pinning characteristics and stacking faults (SFs) formed by Sm substitution on Y and Ba sites was found in Sm-doped YBa 2Cu3O7-δ films. It was confirmed that 223-type-SFs, Y2Ba2Cu3Ox, composed of extra Y and O planes aligned parallel to the ab-planes formed via Sm substitution on the Y site and increased in number with increasing Sm doping on the Ba site. The number density of 223 SFs is correlated strongly with the enhancement in ab-plane-correlated flux pinning, resulting in a sharpening of the H||ab peak in the plot of critical current density versus magnetic field orientation.",

author = "Wee, \{Sung Hun\} and Specht, \{Eliot D.\} and Claudia Cantoni and Zuev, \{Yuri L.\} and Victor Maroni and Winnie Wong-Ng and Guangyao Liu and Haugan, \{Timothy J.\} and Amit Goyal",

year = "2011",

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doi = "10.1103/PhysRevB.83.224520",

language = "English",

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AU - Wee, Sung Hun

AU - Specht, Eliot D.

AU - Cantoni, Claudia

AU - Zuev, Yuri L.

AU - Maroni, Victor

AU - Wong-Ng, Winnie

AU - Liu, Guangyao

AU - Haugan, Timothy J.

AU - Goyal, Amit

PY - 2011/6/29

Y1 - 2011/6/29

N2 - A correlation between flux-pinning characteristics and stacking faults (SFs) formed by Sm substitution on Y and Ba sites was found in Sm-doped YBa 2Cu3O7-δ films. It was confirmed that 223-type-SFs, Y2Ba2Cu3Ox, composed of extra Y and O planes aligned parallel to the ab-planes formed via Sm substitution on the Y site and increased in number with increasing Sm doping on the Ba site. The number density of 223 SFs is correlated strongly with the enhancement in ab-plane-correlated flux pinning, resulting in a sharpening of the H||ab peak in the plot of critical current density versus magnetic field orientation.

AB - A correlation between flux-pinning characteristics and stacking faults (SFs) formed by Sm substitution on Y and Ba sites was found in Sm-doped YBa 2Cu3O7-δ films. It was confirmed that 223-type-SFs, Y2Ba2Cu3Ox, composed of extra Y and O planes aligned parallel to the ab-planes formed via Sm substitution on the Y site and increased in number with increasing Sm doping on the Ba site. The number density of 223 SFs is correlated strongly with the enhancement in ab-plane-correlated flux pinning, resulting in a sharpening of the H||ab peak in the plot of critical current density versus magnetic field orientation.

UR - https://www.scopus.com/pages/publications/79961118747

U2 - 10.1103/PhysRevB.83.224520

DO - 10.1103/PhysRevB.83.224520

M3 - Article

SN - 1098-0121

VL - 83

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 22

M1 - 224520

ER -

Formation of stacking faults and their correlation with flux pinning and critical current density in Sm-doped YBa₂Cu₃O _7-δ films

Abstract

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