Abstract
Saturation of the D° 1s-2p+ transition, the D--singlet transition and CR has been studied in donor (Si)-doped GaAs/AlGaAs multiple-quantum-well samples by magneto-transmission and magneto-photoconductivity measurements with the UCSB free electron laser. Effective lifetimes of the D° 1s-2p+transition were found to vary systematically with laser frequency, decreasing from 62 ns at 84 cm-1 to 3 ns at 124 cm-1. The absorption coefficient of the D--singlet transition initially increased by up to 40% and showed complete quenching at higher laser powers.
| Original language | English |
|---|---|
| Pages (from-to) | 241-246 |
| Number of pages | 6 |
| Journal | Superlattices and Microstructures |
| Volume | 21 |
| Issue number | 2 |
| DOIs | |
| State | Published - Mar 1997 |
Keywords
- Donor impurities
- Free electron laser
- GaAs/AlGa quantum wells
- Saturation spectroscopy
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