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Free electron laser saturation spectroscopy of neutral donors and negative donor ions confined in GaAs/AlGaAs quantum wells

  • S. R. Ryu
  • , G. Herold
  • , J. Kono
  • , M. Salib
  • , B. D. Mccombe
  • , J. Kaminski
  • , S. J. Allen

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Saturation of the D° 1s-2p+ transition, the D--singlet transition and CR has been studied in donor (Si)-doped GaAs/AlGaAs multiple-quantum-well samples by magneto-transmission and magneto-photoconductivity measurements with the UCSB free electron laser. Effective lifetimes of the D° 1s-2p+transition were found to vary systematically with laser frequency, decreasing from 62 ns at 84 cm-1 to 3 ns at 124 cm-1. The absorption coefficient of the D--singlet transition initially increased by up to 40% and showed complete quenching at higher laser powers.

Original languageEnglish
Pages (from-to)241-246
Number of pages6
JournalSuperlattices and Microstructures
Volume21
Issue number2
DOIs
StatePublished - Mar 1997

Keywords

  • Donor impurities
  • Free electron laser
  • GaAs/AlGa quantum wells
  • Saturation spectroscopy

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