Fundamental limits to EUV photoresist

Gregg M. Gallatin; Patrick Naulleau; Robert Brainard

doi:10.1117/12.712346

Fundamental limits to EUV photoresist

Gregg M. Gallatin
, Patrick Naulleau
, Robert Brainard

Nanoscale Science and Engineering

University at Albany

Applied Math Solutions, LLC
Lawrence Berkeley National Laboratory
SUNY Albany

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

88 Scopus citations

Abstract

Recent experimental results indicate that current resists lack the ability to simultaneously meet the 2005 International Roadmap for Semiconductors (ITRS) goals for Resolution, Line Edge Roughness (LER) and Sensitivity (RLS). This RLS tradeoff has also been demonstrated through modeling work. Here we use a model to explore the impact on the RLS tradeoff of anisotropic acid diffusion and increased quantum yield. We show that both these effects can significantly improve the RLS tradeoff.

Original language	English
Title of host publication	Advances in Resist Materials and Processing Technology XXIV
Edition	PART 1
DOIs	https://doi.org/10.1117/12.712346
State	Published - 2007
Event	Advances in Resist Materials and Processing Technology XXIV - San Jose, CA, United States Duration: Feb 26 2007 → Feb 28 2007

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Number	PART 1
Volume	6519

Conference

Conference	Advances in Resist Materials and Processing Technology XXIV
Country/Territory	United States
City	San Jose, CA
Period	02/26/07 → 02/28/07

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10.1117/12.712346

Cite this

@inproceedings{8957187a0f044813a4f987596f06b388,

title = "Fundamental limits to EUV photoresist",

abstract = "Recent experimental results indicate that current resists lack the ability to simultaneously meet the 2005 International Roadmap for Semiconductors (ITRS) goals for Resolution, Line Edge Roughness (LER) and Sensitivity (RLS). This RLS tradeoff has also been demonstrated through modeling work. Here we use a model to explore the impact on the RLS tradeoff of anisotropic acid diffusion and increased quantum yield. We show that both these effects can significantly improve the RLS tradeoff.",

author = "Gallatin, \{Gregg M.\} and Patrick Naulleau and Robert Brainard",

year = "2007",

doi = "10.1117/12.712346",

language = "English",

isbn = "0819466387",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

number = "PART 1",

booktitle = "Advances in Resist Materials and Processing Technology XXIV",

edition = "PART 1",

note = "Advances in Resist Materials and Processing Technology XXIV ; Conference date: 26-02-2007 Through 28-02-2007",

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Gallatin, GM, Naulleau, P & Brainard, R 2007, Fundamental limits to EUV photoresist. in Advances in Resist Materials and Processing Technology XXIV. PART 1 edn, 651911, Proceedings of SPIE - The International Society for Optical Engineering, no. PART 1, vol. 6519, Advances in Resist Materials and Processing Technology XXIV, San Jose, CA, United States, 02/26/07. https://doi.org/10.1117/12.712346

Fundamental limits to EUV photoresist. / Gallatin, Gregg M.; Naulleau, Patrick; Brainard, Robert.
Advances in Resist Materials and Processing Technology XXIV. PART 1. ed. 2007. 651911 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6519, No. PART 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fundamental limits to EUV photoresist

AU - Gallatin, Gregg M.

AU - Naulleau, Patrick

AU - Brainard, Robert

PY - 2007

Y1 - 2007

N2 - Recent experimental results indicate that current resists lack the ability to simultaneously meet the 2005 International Roadmap for Semiconductors (ITRS) goals for Resolution, Line Edge Roughness (LER) and Sensitivity (RLS). This RLS tradeoff has also been demonstrated through modeling work. Here we use a model to explore the impact on the RLS tradeoff of anisotropic acid diffusion and increased quantum yield. We show that both these effects can significantly improve the RLS tradeoff.

AB - Recent experimental results indicate that current resists lack the ability to simultaneously meet the 2005 International Roadmap for Semiconductors (ITRS) goals for Resolution, Line Edge Roughness (LER) and Sensitivity (RLS). This RLS tradeoff has also been demonstrated through modeling work. Here we use a model to explore the impact on the RLS tradeoff of anisotropic acid diffusion and increased quantum yield. We show that both these effects can significantly improve the RLS tradeoff.

UR - https://www.scopus.com/pages/publications/35148886236

U2 - 10.1117/12.712346

DO - 10.1117/12.712346

M3 - Conference contribution

SN - 0819466387

SN - 9780819466389

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Advances in Resist Materials and Processing Technology XXIV

T2 - Advances in Resist Materials and Processing Technology XXIV

Y2 - 26 February 2007 through 28 February 2007

ER -

Fundamental limits to EUV photoresist

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