Abstract
Type-I quantum well gallium antimonide (GaSb)-based diode lasers are the most suitable for operating within the spectral region of 2 to 3.5. μm. This chapter reviews the general milestones in the development of this technology. Specific features of the laser heterostructures, current device performance parameters, and prospects for further development are discussed.
| Original language | English |
|---|---|
| Title of host publication | Semiconductor Lasers |
| Subtitle of host publication | Fundamentals and Applications |
| Publisher | Elsevier Ltd. |
| Pages | 441-486 |
| Number of pages | 46 |
| ISBN (Print) | 9780857091215 |
| DOIs | |
| State | Published - Apr 2013 |
Keywords
- Diode laser
- Infrared
- Optical loss
- Optical mode
- Quantum well
- Threshold current
- Waveguide
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