Galvanic processes on silicon surfaces in Cu(II) alkaline fluoride-free solutions

Galvanic processes on silicon surfaces in alkaline fluoride-free solutions containing Cu(II) ions were investigated in this work. Deposition of copper (I) oxide (Cu₂O) and copper metal at pH 14 onto silicon surfaces at room or elevated temperatures has been demonstrated. This deposition does not require the presence of a reducing agent in the solution. The results clearly show that Cu(II) ions can be reduced to Cu(I) or Cu(0) by silicon and, as a consequence, Cu₂O or copper metal can be deposited at the surface of the substrate.