Abstract
A theoretical analysis is made of galvanomagnetic effects in weakly and strongly deformed p-type Ge. It is shown that under uniaxial deformation conditions when the stretching or compression axis is perpendicular to the current the transverse magnetoresistance DELTA sigma / sigma //0 is different in the cases when the magnetic field is parallel to the deformation axis DELTA sigma // parallel / sigma //0 and perpendicular to this axis DELTA sigma (perpendicular)/ sigma //0. The magnetoresistance anisotropy left bracket ( DELTA sigma // parallel / sigma //0)/( DELTA sigma (perpendicular)/ sigma //0) minus 1 right bracket changes its sign on transition from weak to strong deformation. This anisotropy should be exhibited by p-type Ge films which are deformed in the as-prepared state. The matrix element of the scattering of holes of acoustic lattice vibrations is calculated for an arbitrary compression (elongation) of p-type Ge.
| Original language | English |
|---|---|
| Pages (from-to) | 149-152 |
| Number of pages | 4 |
| Journal | Semiconductors |
| Volume | 9 |
| Issue number | 2 |
| State | Published - 1975 |
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