GaSb-based diode lasers with asymmetric separate confinement heterostructure

Rui Liang; Takashi Hosoda; Gela Kipshidze; Leon Shterengas; Gregory Belenky

doi:10.1109/LPT.2013.2256118

GaSb-based diode lasers with asymmetric separate confinement heterostructure

Rui Liang
, Takashi Hosoda
, Gela Kipshidze
, Leon Shterengas
, Gregory Belenky

Electrical Engineering

Stony Brook University

Stony Brook University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A design for GaSb-based type-I quantum well diode lasers with an AlGaInAsSb/GaInAsSb active region, GaSb and AlGaAsSb separate confinement layers, and an AlSb/InAs hole stopper is proposed. The suppression of carrier recombination outside of the active region leads to improved laser efficiency and temperature stability. At a heatsink temperature of 17° C, the 2-mm-long, 100-μ m-wide, anti-/high-reflection coated devices demonstrate threshold current densities of ∼350A cm² and emit ∼ 220 mW of continuous wave output power at 3.15μ m.

Original language	English
Article number	6493390
Pages (from-to)	925-928
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2013.2256118
State	Published - 2013

Keywords

Carrier stopper
GaSb-based
diode lasers
mid-infrared
separate confinement heterostructure
type-I quantum well (QW)

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10.1109/LPT.2013.2256118

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title = "GaSb-based diode lasers with asymmetric separate confinement heterostructure",

abstract = "A design for GaSb-based type-I quantum well diode lasers with an AlGaInAsSb/GaInAsSb active region, GaSb and AlGaAsSb separate confinement layers, and an AlSb/InAs hole stopper is proposed. The suppression of carrier recombination outside of the active region leads to improved laser efficiency and temperature stability. At a heatsink temperature of 17° C, the 2-mm-long, 100-μ m-wide, anti-/high-reflection coated devices demonstrate threshold current densities of ∼350A cm2 and emit ∼ 220 mW of continuous wave output power at 3.15μ m.",

keywords = "Carrier stopper, GaSb-based, diode lasers, mid-infrared, separate confinement heterostructure, type-I quantum well (QW)",

author = "Rui Liang and Takashi Hosoda and Gela Kipshidze and Leon Shterengas and Gregory Belenky",

year = "2013",

doi = "10.1109/LPT.2013.2256118",

language = "English",

volume = "25",

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journal = "IEEE Photonics Technology Letters",

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T1 - GaSb-based diode lasers with asymmetric separate confinement heterostructure

AU - Liang, Rui

AU - Hosoda, Takashi

AU - Kipshidze, Gela

AU - Shterengas, Leon

AU - Belenky, Gregory

PY - 2013

Y1 - 2013

N2 - A design for GaSb-based type-I quantum well diode lasers with an AlGaInAsSb/GaInAsSb active region, GaSb and AlGaAsSb separate confinement layers, and an AlSb/InAs hole stopper is proposed. The suppression of carrier recombination outside of the active region leads to improved laser efficiency and temperature stability. At a heatsink temperature of 17° C, the 2-mm-long, 100-μ m-wide, anti-/high-reflection coated devices demonstrate threshold current densities of ∼350A cm2 and emit ∼ 220 mW of continuous wave output power at 3.15μ m.

AB - A design for GaSb-based type-I quantum well diode lasers with an AlGaInAsSb/GaInAsSb active region, GaSb and AlGaAsSb separate confinement layers, and an AlSb/InAs hole stopper is proposed. The suppression of carrier recombination outside of the active region leads to improved laser efficiency and temperature stability. At a heatsink temperature of 17° C, the 2-mm-long, 100-μ m-wide, anti-/high-reflection coated devices demonstrate threshold current densities of ∼350A cm2 and emit ∼ 220 mW of continuous wave output power at 3.15μ m.

KW - Carrier stopper

KW - GaSb-based

KW - diode lasers

KW - mid-infrared

KW - separate confinement heterostructure

KW - type-I quantum well (QW)

UR - https://www.scopus.com/pages/publications/84877750412

U2 - 10.1109/LPT.2013.2256118

DO - 10.1109/LPT.2013.2256118

M3 - Article

SN - 1041-1135

VL - 25

SP - 925

EP - 928

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 10

M1 - 6493390

ER -

GaSb-based diode lasers with asymmetric separate confinement heterostructure

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Keywords

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