GaSb-based lasers for spectral region 2-4 μm: Challenges and limitations

The major breakthrough in the development of high power room temperature operated mid-IR semiconductor lasers was described. The performance limitations of the devices based on type-I and type-II quantum well (QW) active region design were analyzed. The future directions in device performance optimization and enhancement of the wavelength for high power room temperature operation were discussed. GaSb-based heavily strained type-I QW lasers were used to fabricate room temperature operating high power laser arrays. The experimental studies were performed to determine the difference between transition matrix elements in type-I and type-II QWs. Single-pass experimental technique was used to measure the absorption spectrum of the quantum well material.