Abstract
We have made transport measurements on GaSbAlSbInAs multi-heterojunctions prepared by MBE. The result has been analyzed on the basis of electron tunneling across thin AlSb layers.
| Original language | English |
|---|---|
| Pages (from-to) | 741-743 |
| Number of pages | 3 |
| Journal | Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics |
| Volume | 117-118 |
| Issue number | PART 2 |
| DOIs | |
| State | Published - Mar 1983 |
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