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Giant Anisotropy of Spin Relaxation and Spin-Valley Mixing in a Silicon Quantum Dot

  • Xin Zhang
  • , Rui Zi Hu
  • , Hai Ou Li
  • , Fang Ming Jing
  • , Yuan Zhou
  • , Rong Long Ma
  • , Ming Ni
  • , Gang Luo
  • , Gang Cao
  • , Gui Lei Wang
  • , Xuedong Hu
  • , Hong Wen Jiang
  • , Guang Can Guo
  • , Guo Ping Guo
  • University of Science and Technology of China
  • Chinese Academy of Sciences
  • University of California at Los Angeles
  • Origin Quantum Computing Company Limited

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot,"the electron spin relaxation rate (T1-1) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2±1.6 μeV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.5±0.7 μeV.

Original languageEnglish
Article number257701
JournalPhysical Review Letters
Volume124
Issue number25
DOIs
StatePublished - Jun 26 2020

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