TY - GEN
T1 - Graphene tunneling transit-time device with electrically induced p-i-n junction
AU - Ryzhii, Victor
AU - Ryzhii, Maxim
AU - Shur, Michael S.
AU - Mitin, Vladimir
PY - 2009
Y1 - 2009
N2 - We propose a graphene tunneling transit-time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer, develop the device model, and calculate its ac characteristics. Using the developed device model, it is shown that the ballistic transit of electrons and holes generated due to interband tunneling in the i-section results in the negative ac conductance in the terahertz frequency range. The device can serve as an active element of terahertz oscillators
AB - We propose a graphene tunneling transit-time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer, develop the device model, and calculate its ac characteristics. Using the developed device model, it is shown that the ballistic transit of electrons and holes generated due to interband tunneling in the i-section results in the negative ac conductance in the terahertz frequency range. The device can serve as an active element of terahertz oscillators
UR - https://www.scopus.com/pages/publications/72749110559
U2 - 10.1109/ICIMW.2009.5325783
DO - 10.1109/ICIMW.2009.5325783
M3 - Conference contribution
SN - 9781424454174
T3 - 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009
BT - 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009
T2 - 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009
Y2 - 21 September 2009 through 25 September 2009
ER -