Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD

Tommaso Orzali; Alexey Vert; Tae Woo Kim; P. Y. Hung; Joshua L. Herman; Saikumar Vivekanand; Gensheng Huang; Max Kelman; Zia Karim; Richard J.W. Hill; Satyavolu S.Papa Rao

doi:10.1016/j.jcrysgro.2015.07.013

Growth and characterization of an In_0.53Ga_0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD

Tommaso Orzali
, Alexey Vert
, Tae Woo Kim
, P. Y. Hung
, Joshua L. Herman
, Saikumar Vivekanand
, Gensheng Huang
, Max Kelman
, Zia Karim
, Richard J.W. Hill
, Satyavolu S.Papa Rao

NY Creates Research Foundation

NY Creates

SEMATECH
SUNY Polytechnic Institute
Aixtron SE
Micron Technology Incorporated

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We report on the development of a metamorphic In_0.53Ga_0.47As-based heterostructure grown on 300 mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a Metal-Oxide-Semiconductor Capacitor (MOSCAP) with C-V characteristics and interfacial trap density (D_it) values comparable to those of an equivalent structure grown on an InP substrate. A 1.15 μm thick GaAs/InP buffer with a defect density in the low 10⁹ cm^-2 range and a surface roughness rms value <2 nm was used to accommodate the large lattice mismatch between In_0.53Ga_0.47As and Si.

Original language	English
Pages (from-to)	72-79
Number of pages	8
Journal	Journal of Crystal Growth
Volume	427
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.07.013
State	Published - Jul 31 2015

Keywords

A3. Metalorganic chemical vapor deposition
B2. Semiconducting III-V materials
B2. Semiconducting gallium arsenide
B2. Semiconducting indium phosphide

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10.1016/j.jcrysgro.2015.07.013

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Orzali, T., Vert, A., Kim, T. W., Hung, P. Y., Herman, J. L., Vivekanand, S., Huang, G., Kelman, M., Karim, Z., Hill, R. J. W., & Rao, S. S. P. (2015). Growth and characterization of an In_0.53Ga_0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD. Journal of Crystal Growth, 427, 72-79. https://doi.org/10.1016/j.jcrysgro.2015.07.013

@article{992f4c9d85004e4d9b32e5a01495eae5,

title = "Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD",

abstract = "We report on the development of a metamorphic In0.53Ga0.47As-based heterostructure grown on 300 mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a Metal-Oxide-Semiconductor Capacitor (MOSCAP) with C-V characteristics and interfacial trap density (Dit) values comparable to those of an equivalent structure grown on an InP substrate. A 1.15 μm thick GaAs/InP buffer with a defect density in the low 109 cm-2 range and a surface roughness rms value <2 nm was used to accommodate the large lattice mismatch between In0.53Ga0.47As and Si.",

keywords = "A3. Metalorganic chemical vapor deposition, B2. Semiconducting III-V materials, B2. Semiconducting gallium arsenide, B2. Semiconducting indium phosphide",

author = "Tommaso Orzali and Alexey Vert and Kim, \{Tae Woo\} and Hung, \{P. Y.\} and Herman, \{Joshua L.\} and Saikumar Vivekanand and Gensheng Huang and Max Kelman and Zia Karim and Hill, \{Richard J.W.\} and Rao, \{Satyavolu S.Papa\}",

year = "2015",

month = jul,

day = "31",

doi = "10.1016/j.jcrysgro.2015.07.013",

language = "English",

volume = "427",

pages = "72--79",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

Orzali, T, Vert, A, Kim, TW, Hung, PY, Herman, JL, Vivekanand, S, Huang, G, Kelman, M, Karim, Z, Hill, RJW & Rao, SSP 2015, 'Growth and characterization of an In_0.53Ga_0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD', Journal of Crystal Growth, vol. 427, pp. 72-79. https://doi.org/10.1016/j.jcrysgro.2015.07.013

TY - JOUR

T1 - Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD

AU - Orzali, Tommaso

AU - Vert, Alexey

AU - Kim, Tae Woo

AU - Hung, P. Y.

AU - Herman, Joshua L.

AU - Vivekanand, Saikumar

AU - Huang, Gensheng

AU - Kelman, Max

AU - Karim, Zia

AU - Hill, Richard J.W.

AU - Rao, Satyavolu S.Papa

PY - 2015/7/31

Y1 - 2015/7/31

N2 - We report on the development of a metamorphic In0.53Ga0.47As-based heterostructure grown on 300 mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a Metal-Oxide-Semiconductor Capacitor (MOSCAP) with C-V characteristics and interfacial trap density (Dit) values comparable to those of an equivalent structure grown on an InP substrate. A 1.15 μm thick GaAs/InP buffer with a defect density in the low 109 cm-2 range and a surface roughness rms value <2 nm was used to accommodate the large lattice mismatch between In0.53Ga0.47As and Si.

AB - We report on the development of a metamorphic In0.53Ga0.47As-based heterostructure grown on 300 mm on-axis Si (001) wafers by metal-organic chemical vapor deposition (MOCVD), and the fabrication of a Metal-Oxide-Semiconductor Capacitor (MOSCAP) with C-V characteristics and interfacial trap density (Dit) values comparable to those of an equivalent structure grown on an InP substrate. A 1.15 μm thick GaAs/InP buffer with a defect density in the low 109 cm-2 range and a surface roughness rms value <2 nm was used to accommodate the large lattice mismatch between In0.53Ga0.47As and Si.

KW - A3. Metalorganic chemical vapor deposition

KW - B2. Semiconducting III-V materials

KW - B2. Semiconducting gallium arsenide

KW - B2. Semiconducting indium phosphide

UR - https://www.scopus.com/pages/publications/84938118507

U2 - 10.1016/j.jcrysgro.2015.07.013

DO - 10.1016/j.jcrysgro.2015.07.013

M3 - Article

SN - 0022-0248

VL - 427

SP - 72

EP - 79

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Growth and characterization of an In_0.53Ga_0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD

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