Abstract
A detailed study of the operating characteristics of low threshold current density 1.3 μmn quantum dot lasers is reported. The effects of gain saturation are discussed and the temperature performance of these devices is shown to be enhanced by the implementation of improved laser fabrication technologies.
| Original language | English |
|---|---|
| Pages (from-to) | 2520-2522 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 44 |
| Issue number | 4 B |
| DOIs | |
| State | Published - Apr 2005 |
Keywords
- Gain saturation
- Quantum dot laser
- Ridge waveguide
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