Abstract
Epitaxial silicon has been deposited selectively in an atmospheric pressure system at temperatures from 850 down to 600°C. Si was deposited by the hydrogen reduction of dichlorosilane in an ultraclean system using a loadlock and purified gases. Water and oxygen impurities in the hydrogen carrier gas were found to block or degrade epitaxial growth when not removed by a purifier. The growth rate at 750°C is 16 nm/min and is strongly activated with temperature. The epitaxial layers are free of faceting adjacent to oxide islands aligned along both the <110> and <100> directions.
| Original language | English |
|---|---|
| Pages (from-to) | 3042-3047 |
| Number of pages | 6 |
| Journal | Journal of the Electrochemical Society |
| Volume | 138 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 1991 |
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