Growth of GaN films on porous SiC substrate by molecular-beam epitaxy

F. Yun; M. A. Reshchikov; L. He; H. Morkoç; C. K. Inoki; T. S. Kuan

doi:10.1063/1.1524304

Growth of GaN films on porous SiC substrate by molecular-beam epitaxy

F. Yun
, M. A. Reshchikov
, L. He
, H. Morkoç
, C. K. Inoki
, T. S. Kuan

Physics

University at Albany

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

The growth of GaN films on porous SiC (PSiC) substrate was investigated by using molecular-beam epitaxy. The crystalline quality of GaN grown on PSiC substrate was measured by using high-resolution X-ray diffraction (XRD). The high quality photoluminescence spectra indicated an improved quality of GaN films grown on porous SiC substrates.

Original language	English
Pages (from-to)	4142-4144
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	22
DOIs	https://doi.org/10.1063/1.1524304
State	Published - Nov 25 2002

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title = "Growth of GaN films on porous SiC substrate by molecular-beam epitaxy",

abstract = "The growth of GaN films on porous SiC (PSiC) substrate was investigated by using molecular-beam epitaxy. The crystalline quality of GaN grown on PSiC substrate was measured by using high-resolution X-ray diffraction (XRD). The high quality photoluminescence spectra indicated an improved quality of GaN films grown on porous SiC substrates.",

author = "F. Yun and Reshchikov, \{M. A.\} and L. He and H. Morko{\c c} and Inoki, \{C. K.\} and Kuan, \{T. S.\}",

year = "2002",

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doi = "10.1063/1.1524304",

language = "English",

volume = "81",

pages = "4142--4144",

journal = "Applied Physics Letters",

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T1 - Growth of GaN films on porous SiC substrate by molecular-beam epitaxy

AU - Yun, F.

AU - Reshchikov, M. A.

AU - He, L.

AU - Morkoç, H.

AU - Inoki, C. K.

AU - Kuan, T. S.

PY - 2002/11/25

Y1 - 2002/11/25

N2 - The growth of GaN films on porous SiC (PSiC) substrate was investigated by using molecular-beam epitaxy. The crystalline quality of GaN grown on PSiC substrate was measured by using high-resolution X-ray diffraction (XRD). The high quality photoluminescence spectra indicated an improved quality of GaN films grown on porous SiC substrates.

AB - The growth of GaN films on porous SiC (PSiC) substrate was investigated by using molecular-beam epitaxy. The crystalline quality of GaN grown on PSiC substrate was measured by using high-resolution X-ray diffraction (XRD). The high quality photoluminescence spectra indicated an improved quality of GaN films grown on porous SiC substrates.

UR - https://www.scopus.com/pages/publications/0037175956

U2 - 10.1063/1.1524304

DO - 10.1063/1.1524304

M3 - Article

SN - 0003-6951

VL - 81

SP - 4142

EP - 4144

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Growth of GaN films on porous SiC substrate by molecular-beam epitaxy

Abstract

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