Growth of large-area high-quality CdZnTe substrates by the computer-controlled vertical Bridgman method

Louis G. Casagrande; David J. Larson; Don Di Marzio; Jun Wu; Michael Dudley; David R. Black; Harold Burdette

Growth of large-area high-quality CdZnTe substrates by the computer-controlled vertical Bridgman method

Louis G. Casagrande
, David J. Larson
, Don Di Marzio
, Jun Wu
, Michael Dudley
, David R. Black
, Harold Burdette

Materials Science and Engineering

Stony Brook University

Northrop Grumman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

The reproducible growth of large, high-quality CdZnTe crystals is crucial for providing low- cost substrates for IR focal plane arrays. We have grown 3-kg, 6.4-cm diameter Cd_1-xZn_xTe (x 0.04) ingots by the vertical Bridgman method, from which we have obtained large-area wafers that can yield single-crystal, twin-free substrates up to 4 cm × 6 cm. The computer-controlled thermal environment was designed to reduce thermal stresses both on the solidified boule and at the melt/solid interface. The ampoule was constructed to reduce the excess Te concentration without active atmosphere control. FTIR transmission spectra of these wafers exhibited 65% transmission from 2.5 μm to 20 μm across the entire wafer. Glow discharge mass spectrometry (GDMS) confirmed that the concentrations of detrimental impurities were 3 × 10¹⁴ cm^-3. X-ray synchrotron topography showed that the substrates contained large-area subgrains with minimal residual strain at the boundaries. We discuss the suitability of these substrates for LPE growth of Hg_1-yCdx_yTe (y 0.2) epilayers.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Herbert K. Pollehn, Ray Balcerak
Publisher	Publ by Society of Photo-Optical Instrumentation Engineers
Pages	21-32
Number of pages	12
ISBN (Print)	0819415324
State	Published - 1994
Event	Producibility of II-VI Materials and Devices - Orlando, FL, USA Duration: Apr 6 1994 → Apr 8 1994

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2228

Conference

Conference	Producibility of II-VI Materials and Devices
City	Orlando, FL, USA
Period	04/6/94 → 04/8/94

Cite this

Casagrande, L. G., Larson, D. J., Di Marzio, D., Wu, J., Dudley, M., Black, D. R., & Burdette, H. (1994). Growth of large-area high-quality CdZnTe substrates by the computer-controlled vertical Bridgman method. In H. K. Pollehn, & R. Balcerak (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 21-32). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2228). Publ by Society of Photo-Optical Instrumentation Engineers.

Casagrande, Louis G. ; Larson, David J. ; Di Marzio, Don et al. / Growth of large-area high-quality CdZnTe substrates by the computer-controlled vertical Bridgman method. Proceedings of SPIE - The International Society for Optical Engineering. editor / Herbert K. Pollehn ; Ray Balcerak. Publ by Society of Photo-Optical Instrumentation Engineers, 1994. pp. 21-32 (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{d7481c6651f64f25afcfa7ed13d2f744,

title = "Growth of large-area high-quality CdZnTe substrates by the computer-controlled vertical Bridgman method",

abstract = "The reproducible growth of large, high-quality CdZnTe crystals is crucial for providing low- cost substrates for IR focal plane arrays. We have grown 3-kg, 6.4-cm diameter Cd 1-xZnxTe (x 0.04) ingots by the vertical Bridgman method, from which we have obtained large-area wafers that can yield single-crystal, twin-free substrates up to 4 cm × 6 cm. The computer-controlled thermal environment was designed to reduce thermal stresses both on the solidified boule and at the melt/solid interface. The ampoule was constructed to reduce the excess Te concentration without active atmosphere control. FTIR transmission spectra of these wafers exhibited 65\% transmission from 2.5 μm to 20 μm across the entire wafer. Glow discharge mass spectrometry (GDMS) confirmed that the concentrations of detrimental impurities were 3 × 1014 cm-3. X-ray synchrotron topography showed that the substrates contained large-area subgrains with minimal residual strain at the boundaries. We discuss the suitability of these substrates for LPE growth of Hg1-yCdxyTe (y 0.2) epilayers.",

author = "Casagrande, \{Louis G.\} and Larson, \{David J.\} and \{Di Marzio\}, Don and Jun Wu and Michael Dudley and Black, \{David R.\} and Harold Burdette",

year = "1994",

language = "English",

isbn = "0819415324",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Publ by Society of Photo-Optical Instrumentation Engineers",

pages = "21--32",

editor = "Pollehn, \{Herbert K.\} and Ray Balcerak",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Producibility of II-VI Materials and Devices ; Conference date: 06-04-1994 Through 08-04-1994",

}

Casagrande, LG, Larson, DJ, Di Marzio, D, Wu, J, Dudley, M, Black, DR & Burdette, H 1994, Growth of large-area high-quality CdZnTe substrates by the computer-controlled vertical Bridgman method. in HK Pollehn & R Balcerak (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2228, Publ by Society of Photo-Optical Instrumentation Engineers, pp. 21-32, Producibility of II-VI Materials and Devices, Orlando, FL, USA, 04/6/94.

Growth of large-area high-quality CdZnTe substrates by the computer-controlled vertical Bridgman method. / Casagrande, Louis G.; Larson, David J.; Di Marzio, Don et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Herbert K. Pollehn; Ray Balcerak. Publ by Society of Photo-Optical Instrumentation Engineers, 1994. p. 21-32 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2228).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth of large-area high-quality CdZnTe substrates by the computer-controlled vertical Bridgman method

AU - Casagrande, Louis G.

AU - Larson, David J.

AU - Di Marzio, Don

AU - Wu, Jun

AU - Dudley, Michael

AU - Black, David R.

AU - Burdette, Harold

PY - 1994

Y1 - 1994

N2 - The reproducible growth of large, high-quality CdZnTe crystals is crucial for providing low- cost substrates for IR focal plane arrays. We have grown 3-kg, 6.4-cm diameter Cd 1-xZnxTe (x 0.04) ingots by the vertical Bridgman method, from which we have obtained large-area wafers that can yield single-crystal, twin-free substrates up to 4 cm × 6 cm. The computer-controlled thermal environment was designed to reduce thermal stresses both on the solidified boule and at the melt/solid interface. The ampoule was constructed to reduce the excess Te concentration without active atmosphere control. FTIR transmission spectra of these wafers exhibited 65% transmission from 2.5 μm to 20 μm across the entire wafer. Glow discharge mass spectrometry (GDMS) confirmed that the concentrations of detrimental impurities were 3 × 1014 cm-3. X-ray synchrotron topography showed that the substrates contained large-area subgrains with minimal residual strain at the boundaries. We discuss the suitability of these substrates for LPE growth of Hg1-yCdxyTe (y 0.2) epilayers.

AB - The reproducible growth of large, high-quality CdZnTe crystals is crucial for providing low- cost substrates for IR focal plane arrays. We have grown 3-kg, 6.4-cm diameter Cd 1-xZnxTe (x 0.04) ingots by the vertical Bridgman method, from which we have obtained large-area wafers that can yield single-crystal, twin-free substrates up to 4 cm × 6 cm. The computer-controlled thermal environment was designed to reduce thermal stresses both on the solidified boule and at the melt/solid interface. The ampoule was constructed to reduce the excess Te concentration without active atmosphere control. FTIR transmission spectra of these wafers exhibited 65% transmission from 2.5 μm to 20 μm across the entire wafer. Glow discharge mass spectrometry (GDMS) confirmed that the concentrations of detrimental impurities were 3 × 1014 cm-3. X-ray synchrotron topography showed that the substrates contained large-area subgrains with minimal residual strain at the boundaries. We discuss the suitability of these substrates for LPE growth of Hg1-yCdxyTe (y 0.2) epilayers.

UR - https://www.scopus.com/pages/publications/0028715208

M3 - Conference contribution

SN - 0819415324

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 21

EP - 32

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Pollehn, Herbert K.

A2 - Balcerak, Ray

PB - Publ by Society of Photo-Optical Instrumentation Engineers

T2 - Producibility of II-VI Materials and Devices

Y2 - 6 April 1994 through 8 April 1994

ER -

Casagrande LG, Larson DJ, Di Marzio D, Wu J, Dudley M, Black DR et al. Growth of large-area high-quality CdZnTe substrates by the computer-controlled vertical Bridgman method. In Pollehn HK, Balcerak R, editors, Proceedings of SPIE - The International Society for Optical Engineering. Publ by Society of Photo-Optical Instrumentation Engineers. 1994. p. 21-32. (Proceedings of SPIE - The International Society for Optical Engineering).

Growth of large-area high-quality CdZnTe substrates by the computer-controlled vertical Bridgman method

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