Growth of ZnTe by physical vapor transport and traveling heater method

Ching Hua Su; M. P. Volz; D. C. Gillies; F. R. Szofran; S. L. Lehoczky; M. Dudley; G. D. Yao; Wenyi Zhou

doi:10.1016/S0022-0248(07)80013-3

Growth of ZnTe by physical vapor transport and traveling heater method

Ching Hua Su
, M. P. Volz
, D. C. Gillies
, F. R. Szofran
, S. L. Lehoczky
, M. Dudley
, G. D. Yao
, Wenyi Zhou

Materials Science and Engineering

Stony Brook University

NASA Marshall Space Flight Center
Stony Brook University

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

ZnTe crystals were grown by horizontal physical vapor transport (PVT) and a Te-solution vertical traveling heater method (THM). The grown crystals were examined by X-ray Laue diffraction technique and Hall measurements to determine the growth orientation and the electrical properties of the crystals. They were also characterized by low temperature infrared (IR) absorption measurements. Several sets of distinct peaks were observed in the IR absorption spectra for the THM samples and were identified as resulting from Cu²⁺ impurities. Similar measurements on vapor grown ZnTe showed featureless absorption spectra. Chemical analyses were carried out to measure the impurity content in various ZnTe samples and synchrotron radiation topography was used to study crystalline microstructure of the (111) ZnTe single crystals grown by PVT.

Original language	English
Pages (from-to)	627-632
Number of pages	6
Journal	Journal of Crystal Growth
Volume	128
Issue number	1-4 PART 2
DOIs	https://doi.org/10.1016/S0022-0248(07)80013-3
State	Published - Mar 1 1993

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title = "Growth of ZnTe by physical vapor transport and traveling heater method",

abstract = "ZnTe crystals were grown by horizontal physical vapor transport (PVT) and a Te-solution vertical traveling heater method (THM). The grown crystals were examined by X-ray Laue diffraction technique and Hall measurements to determine the growth orientation and the electrical properties of the crystals. They were also characterized by low temperature infrared (IR) absorption measurements. Several sets of distinct peaks were observed in the IR absorption spectra for the THM samples and were identified as resulting from Cu2+ impurities. Similar measurements on vapor grown ZnTe showed featureless absorption spectra. Chemical analyses were carried out to measure the impurity content in various ZnTe samples and synchrotron radiation topography was used to study crystalline microstructure of the (111) ZnTe single crystals grown by PVT.",

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doi = "10.1016/S0022-0248(07)80013-3",

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TY - JOUR

T1 - Growth of ZnTe by physical vapor transport and traveling heater method

AU - Su, Ching Hua

AU - Volz, M. P.

AU - Gillies, D. C.

AU - Szofran, F. R.

AU - Lehoczky, S. L.

AU - Dudley, M.

AU - Yao, G. D.

AU - Zhou, Wenyi

PY - 1993/3/1

Y1 - 1993/3/1

N2 - ZnTe crystals were grown by horizontal physical vapor transport (PVT) and a Te-solution vertical traveling heater method (THM). The grown crystals were examined by X-ray Laue diffraction technique and Hall measurements to determine the growth orientation and the electrical properties of the crystals. They were also characterized by low temperature infrared (IR) absorption measurements. Several sets of distinct peaks were observed in the IR absorption spectra for the THM samples and were identified as resulting from Cu2+ impurities. Similar measurements on vapor grown ZnTe showed featureless absorption spectra. Chemical analyses were carried out to measure the impurity content in various ZnTe samples and synchrotron radiation topography was used to study crystalline microstructure of the (111) ZnTe single crystals grown by PVT.

AB - ZnTe crystals were grown by horizontal physical vapor transport (PVT) and a Te-solution vertical traveling heater method (THM). The grown crystals were examined by X-ray Laue diffraction technique and Hall measurements to determine the growth orientation and the electrical properties of the crystals. They were also characterized by low temperature infrared (IR) absorption measurements. Several sets of distinct peaks were observed in the IR absorption spectra for the THM samples and were identified as resulting from Cu2+ impurities. Similar measurements on vapor grown ZnTe showed featureless absorption spectra. Chemical analyses were carried out to measure the impurity content in various ZnTe samples and synchrotron radiation topography was used to study crystalline microstructure of the (111) ZnTe single crystals grown by PVT.

UR - https://www.scopus.com/pages/publications/0027557940

U2 - 10.1016/S0022-0248(07)80013-3

DO - 10.1016/S0022-0248(07)80013-3

M3 - Article

SN - 0022-0248

VL - 128

SP - 627

EP - 632

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4 PART 2

ER -

Growth of ZnTe by physical vapor transport and traveling heater method

Abstract

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