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Hall effect in a magnetic-field-localized two-dimensional electron system

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Abstract

We report measurements of the Hall effect in the localized two-dimensional electron system at low Landau-level filling factors ν, where the diagonal resistivity is thermally activated, including the regime previously identified as a pinned Wigner crystal. We find that the Hall resistivity is universally given by the classical, free-electron gas value of h/νe2 (within experimental uncertainty of 5%) even when the diverging diagonal resistivity reaches ∼100h/νe2. This implies that both Hall and diagonal conductivities, calculated via matrix inversion, approach zero in the localized regime.

Original languageEnglish
Pages (from-to)10548-10554
Number of pages7
JournalPhysical Review B
Volume47
Issue number16
DOIs
StatePublished - 1993

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