TY - GEN
T1 - Hetero-interface modification in thin film ZnO/Si solar cells
AU - Mersich, Peter T.
AU - Yen, Tingfang
AU - Anderson, Wayne A.
PY - 2009
Y1 - 2009
N2 - Thin film ZnO/Si heterojunction solar cells were explored for their potentially low cost application. Microcrystalline silicon (μc-Si) deposited by metal induced growth (MIG) demonstrated viable photo response as a thin film base layer. Modeling using AMPS-1D was performed on various heterostructures. In thin film devices, Interface defects of 8.8x1011 1/cm2-eV were shown to significantly reduce fill factor and efficiency, while the addition of an a-Si interlayer diminished these effects and increased spectral response and the value of efficiency. Experimentally, the interlayer was implemented as sequential a-Si/nc-Si layers deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD). This was shown to improve conduction in μc-Si photodiodes and ZnO/p-Si heterojunctions. Upon a preliminary trial of implementing the complete thin film heterostructure, a diode behavior was observed despite a high keakage current that negated photo response.
AB - Thin film ZnO/Si heterojunction solar cells were explored for their potentially low cost application. Microcrystalline silicon (μc-Si) deposited by metal induced growth (MIG) demonstrated viable photo response as a thin film base layer. Modeling using AMPS-1D was performed on various heterostructures. In thin film devices, Interface defects of 8.8x1011 1/cm2-eV were shown to significantly reduce fill factor and efficiency, while the addition of an a-Si interlayer diminished these effects and increased spectral response and the value of efficiency. Experimentally, the interlayer was implemented as sequential a-Si/nc-Si layers deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD). This was shown to improve conduction in μc-Si photodiodes and ZnO/p-Si heterojunctions. Upon a preliminary trial of implementing the complete thin film heterostructure, a diode behavior was observed despite a high keakage current that negated photo response.
UR - https://www.scopus.com/pages/publications/77951573918
U2 - 10.1109/PVSC.2009.5411656
DO - 10.1109/PVSC.2009.5411656
M3 - Conference contribution
SN - 9781424429509
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 390
EP - 393
BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Y2 - 7 June 2009 through 12 June 2009
ER -