HfO2-III-nitride RF switch with capacitively coupled contacts

Alexei Koudymov; Nezih Pala; V. Tokranov; Serge Oktyabrsky; Mikhail Gaevski; R. Jain; J. Yang; X. Hu; Michael Shur; Remis Gaska; Grigory Simin

doi:10.1109/LED.2009.2017284

HfO₂-III-nitride RF switch with capacitively coupled contacts

Alexei Koudymov
, Nezih Pala
, V. Tokranov
, Serge Oktyabrsky
, Mikhail Gaevski
, R. Jain
, J. Yang
, X. Hu
, Michael Shur
, Remis Gaska
, Grigory Simin

University at Albany

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report on the first metal-oxide-semiconductor AlGaN/GaN radio-frequency (RF) switch with capacitively coupled contacts using a HfO₂ layer as the gate dielectric and surface passivation layer. The new insulating-gate RF switch has a lower leakage current and can handle higher RF powers than AlGaN/GaN HFET switches.

Original language	English
Pages (from-to)	478-480
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	5
DOIs	https://doi.org/10.1109/LED.2009.2017284
State	Published - 2009

Keywords

AlGaN/GaN
Capacitive coupling
HfO
High-k dielectric
Radio-frequency (RF) switch

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10.1109/LED.2009.2017284

Cite this

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title = "HfO2-III-nitride RF switch with capacitively coupled contacts",

abstract = "We report on the first metal-oxide-semiconductor AlGaN/GaN radio-frequency (RF) switch with capacitively coupled contacts using a HfO2 layer as the gate dielectric and surface passivation layer. The new insulating-gate RF switch has a lower leakage current and can handle higher RF powers than AlGaN/GaN HFET switches.",

keywords = "AlGaN/GaN, Capacitive coupling, HfO, High-k dielectric, Radio-frequency (RF) switch",

author = "Alexei Koudymov and Nezih Pala and V. Tokranov and Serge Oktyabrsky and Mikhail Gaevski and R. Jain and J. Yang and X. Hu and Michael Shur and Remis Gaska and Grigory Simin",

year = "2009",

doi = "10.1109/LED.2009.2017284",

language = "English",

volume = "30",

pages = "478--480",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

TY - JOUR

T1 - HfO2-III-nitride RF switch with capacitively coupled contacts

AU - Koudymov, Alexei

AU - Pala, Nezih

AU - Tokranov, V.

AU - Oktyabrsky, Serge

AU - Gaevski, Mikhail

AU - Jain, R.

AU - Yang, J.

AU - Hu, X.

AU - Shur, Michael

AU - Gaska, Remis

AU - Simin, Grigory

PY - 2009

Y1 - 2009

N2 - We report on the first metal-oxide-semiconductor AlGaN/GaN radio-frequency (RF) switch with capacitively coupled contacts using a HfO2 layer as the gate dielectric and surface passivation layer. The new insulating-gate RF switch has a lower leakage current and can handle higher RF powers than AlGaN/GaN HFET switches.

AB - We report on the first metal-oxide-semiconductor AlGaN/GaN radio-frequency (RF) switch with capacitively coupled contacts using a HfO2 layer as the gate dielectric and surface passivation layer. The new insulating-gate RF switch has a lower leakage current and can handle higher RF powers than AlGaN/GaN HFET switches.

KW - AlGaN/GaN

KW - Capacitive coupling

KW - HfO

KW - High-k dielectric

KW - Radio-frequency (RF) switch

UR - https://www.scopus.com/pages/publications/67349096321

U2 - 10.1109/LED.2009.2017284

DO - 10.1109/LED.2009.2017284

M3 - Article

SN - 0741-3106

VL - 30

SP - 478

EP - 480

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

HfO₂-III-nitride RF switch with capacitively coupled contacts

Abstract

Keywords

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