@inproceedings{df8127ddfdfb4eb9a64a9a97e693f2e2,
title = "High doping effects on in-situ Ohmic contacts to n-InAs",
abstract = "We present the effect of active carrier concentration on the specific contact resistivity (ρc) of in-situ molybdenum (Mo) Ohmic contacts to n-type InAs. It is observed that, although the Fermi level pins in the conduction band for InAs, the contact resistivity decreases with the increase in InAs active carrier concentration. The lowest ρc obtained through transmission line model measurements was (0.6±0.4) ×10-8 Ω-cm2 for samples with 8.2×1019 cm-3 active carrier concentration. The contacts were found to remain stable on annealing at 250 °C for 1 hour.",
author = "Ashish Baraskar and Vibhor Jain and Wistey, \{Mark A.\} and Uttam Singisetti and Lee, \{Yong Ju\} and Brian Thibeault and Arthur Gossard and Rodwell, \{Mark J.W.\}",
year = "2010",
doi = "10.1109/ICIPRM.2010.5516269",
language = "English",
isbn = "9781424459209",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "481--484",
booktitle = "2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings",
note = "22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 ; Conference date: 31-05-2010 Through 04-06-2010",
}