High-dose oxygen implantation of multilayered thin films for the formation of high-temperature superconductors: A feasibility study

A high-dose ion implantation technique for the formation of high-temperature superconducting thin films on silicon substrates is investigated. This technique consists of three steps: (1) deposition of a multilayer sample of the appropriate composition, (2) implantation of oxygen to mix the layers and oxidize the resulting film simultaneously, (3) annealing in oxygen to form the superconductor (and to supplement the oxygen content, if necessary). Potential advantages of the technique are discussed. Thin films have been fabricated and implanted. Moderately homogeneous film of the composition Y₁Ba₂Cu₃O₆ were achieved. Initial annealing studies suggest that a mixture formed by this method does not crystallize below a temperature of 700°C for a 1 min rapid thermal anneal.