High-gain quantum-dot infrared photodetector

V. V. Mitin; V. I. Pipa; A. V. Sergeev; M. Dutta; M. Stroscio

doi:10.1016/S1350-4495(01)00107-4

High-gain quantum-dot infrared photodetector

V. V. Mitin
, V. I. Pipa
, A. V. Sergeev
, M. Dutta
, M. Stroscio

Department of Electrical Engineering

University at Buffalo

Wayne State University
NASU - Institute of Semiconductors Physics
United States Army Research Office

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

An innovative idea in design of sensitive quantum-dot (QD) infrared photodetector is to use a structure with QDs surrounded by repulsive potential barriers which are created due to interdot doping. Spatial separation of the localized ground state and continuum conducting states of the electron increases significantly the photoelectron capture time and photoconductive gain. Large value of the gain results in high responsivity, which in turn improves detectivity and raises the device operating temperature.

Original language	English
Pages (from-to)	467-472
Number of pages	6
Journal	Infrared Physics and Technology
Volume	42
Issue number	3-5
DOIs	https://doi.org/10.1016/S1350-4495(01)00107-4
State	Published - Jun 2001

Keywords

Capture
Photodetector
Potential barrier
Quantum dot

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10.1016/S1350-4495(01)00107-4

Cite this

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title = "High-gain quantum-dot infrared photodetector",

abstract = "An innovative idea in design of sensitive quantum-dot (QD) infrared photodetector is to use a structure with QDs surrounded by repulsive potential barriers which are created due to interdot doping. Spatial separation of the localized ground state and continuum conducting states of the electron increases significantly the photoelectron capture time and photoconductive gain. Large value of the gain results in high responsivity, which in turn improves detectivity and raises the device operating temperature.",

keywords = "Capture, Photodetector, Potential barrier, Quantum dot",

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AU - Pipa, V. I.

AU - Sergeev, A. V.

AU - Dutta, M.

AU - Stroscio, M.

PY - 2001/6

Y1 - 2001/6

N2 - An innovative idea in design of sensitive quantum-dot (QD) infrared photodetector is to use a structure with QDs surrounded by repulsive potential barriers which are created due to interdot doping. Spatial separation of the localized ground state and continuum conducting states of the electron increases significantly the photoelectron capture time and photoconductive gain. Large value of the gain results in high responsivity, which in turn improves detectivity and raises the device operating temperature.

AB - An innovative idea in design of sensitive quantum-dot (QD) infrared photodetector is to use a structure with QDs surrounded by repulsive potential barriers which are created due to interdot doping. Spatial separation of the localized ground state and continuum conducting states of the electron increases significantly the photoelectron capture time and photoconductive gain. Large value of the gain results in high responsivity, which in turn improves detectivity and raises the device operating temperature.

KW - Capture

KW - Photodetector

KW - Potential barrier

KW - Quantum dot

UR - https://www.scopus.com/pages/publications/0035368493

U2 - 10.1016/S1350-4495(01)00107-4

DO - 10.1016/S1350-4495(01)00107-4

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VL - 42

SP - 467

EP - 472

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

IS - 3-5

ER -

High-gain quantum-dot infrared photodetector

Abstract

Keywords

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