High mobility crystalline silicon film growth below 600 °C from an Au-Si eutectic melt for TFTs

Pravakar Prasad Rajbhandari; Tara P. Dhakal; Ratnakar D. Vispute; Ashok Chaudhari

doi:10.1016/j.matlet.2018.02.080

High mobility crystalline silicon film growth below 600 °C from an Au-Si eutectic melt for TFTs

Pravakar Prasad Rajbhandari
, Tara P. Dhakal
, Ratnakar D. Vispute
, Ashok Chaudhari

Electrical and Computer Eng

Binghamton University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report the growth of a crystalline silicon thin film on buffered soda-lime glass below 600 °C from a gold (Au) – silicon (Si) eutectic melt with electron mobility of 188 cm² V⁻¹ s⁻¹ as measured by the Hall effect measurement. The film was characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, cross-section Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM) all confirming a thin continuous film of highly crystalline silicon grown on buffered soda-lime glass. This is a breakthrough process that can replace low temperature polysilicon (LTPS) in thin-film transistor (TFT) fabrication for driving pixels in large displays.

Original language	English
Pages (from-to)	138-142
Number of pages	5
Journal	Materials Letters
Volume	219
DOIs	https://doi.org/10.1016/j.matlet.2018.02.080
State	Published - May 15 2018

Keywords

Low temperature polysilicon (LTPS)
TFT fabrication
Thin-film silicon

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10.1016/j.matlet.2018.02.080

Cite this

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title = "High mobility crystalline silicon film growth below 600 °C from an Au-Si eutectic melt for TFTs",

abstract = "We report the growth of a crystalline silicon thin film on buffered soda-lime glass below 600 °C from a gold (Au) – silicon (Si) eutectic melt with electron mobility of 188 cm2 V−1 s−1 as measured by the Hall effect measurement. The film was characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, cross-section Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM) all confirming a thin continuous film of highly crystalline silicon grown on buffered soda-lime glass. This is a breakthrough process that can replace low temperature polysilicon (LTPS) in thin-film transistor (TFT) fabrication for driving pixels in large displays.",

keywords = "Low temperature polysilicon (LTPS), TFT fabrication, Thin-film silicon",

author = "Rajbhandari, \{Pravakar Prasad\} and Dhakal, \{Tara P.\} and Vispute, \{Ratnakar D.\} and Ashok Chaudhari",

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year = "2018",

month = may,

day = "15",

doi = "10.1016/j.matlet.2018.02.080",

language = "English",

volume = "219",

pages = "138--142",

journal = "Materials Letters",

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TY - JOUR

T1 - High mobility crystalline silicon film growth below 600 °C from an Au-Si eutectic melt for TFTs

AU - Rajbhandari, Pravakar Prasad

AU - Dhakal, Tara P.

AU - Vispute, Ratnakar D.

AU - Chaudhari, Ashok

PY - 2018/5/15

Y1 - 2018/5/15

N2 - We report the growth of a crystalline silicon thin film on buffered soda-lime glass below 600 °C from a gold (Au) – silicon (Si) eutectic melt with electron mobility of 188 cm2 V−1 s−1 as measured by the Hall effect measurement. The film was characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, cross-section Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM) all confirming a thin continuous film of highly crystalline silicon grown on buffered soda-lime glass. This is a breakthrough process that can replace low temperature polysilicon (LTPS) in thin-film transistor (TFT) fabrication for driving pixels in large displays.

AB - We report the growth of a crystalline silicon thin film on buffered soda-lime glass below 600 °C from a gold (Au) – silicon (Si) eutectic melt with electron mobility of 188 cm2 V−1 s−1 as measured by the Hall effect measurement. The film was characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, cross-section Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM) all confirming a thin continuous film of highly crystalline silicon grown on buffered soda-lime glass. This is a breakthrough process that can replace low temperature polysilicon (LTPS) in thin-film transistor (TFT) fabrication for driving pixels in large displays.

KW - Low temperature polysilicon (LTPS)

KW - TFT fabrication

KW - Thin-film silicon

UR - https://www.scopus.com/pages/publications/85042380728

U2 - 10.1016/j.matlet.2018.02.080

DO - 10.1016/j.matlet.2018.02.080

M3 - Article

SN - 0167-577X

VL - 219

SP - 138

EP - 142

JO - Materials Letters

JF - Materials Letters

ER -

High mobility crystalline silicon film growth below 600 °C from an Au-Si eutectic melt for TFTs

Abstract

Keywords

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High mobility crystalline silicon film growth below 600 °C from an Au-Si eutectic melt for TFTs

Abstract

Keywords

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Cite this

High mobility crystalline silicon film growth below 600 °C from an Au-Si eutectic melt for TFTs