@inproceedings{d0d4d1ea0f8942b8948e7f48e25cf10b,
title = "High performance interband cascade lasers at 3.8 microns",
abstract = "An interband cascade laser design has been grown by molecular beam epitaxy using uncracked arsenic and antimony sources. Lasers were fabricated into both broad-area and narrow-ridge devices, with cavity lengths ranging between 1 mm and 4 mm. At 300K, under low-duty-cycle pulsed conditions, threshold current densities for lasers with 2-mm cavity lengths are as low as 395 A/cm 2, with optical emission centered at a wavelength of ∼3.82 μm at 300 K. Continuous-wave (cw) performance of the narrow-ridge devices has been achieved for temperatures up to almost 60°C. We present results of both pulsed (broad-area and ridge) and cw (ridge only) measurements on these lasers, including L-I-V, spectral, cavity-length, and Hakki-Paoli analyses.",
keywords = "Chemical sensing, Free-space communications, Infrared countermeasures, Interband cascade lasers, Mid-IR lasers, Semiconductor lasers",
author = "Leavitt, \{R. P.\} and Bruno, \{J. D.\} and Bradshaw, \{J. L.\} and Lascola, \{K. M.\} and Pham, \{J. T.\} and Towner, \{F. J.\} and S. Suchalkin and G. Belenky and I. Vurgaftman and Canedy, \{C. L.\} and Bewley, \{W. W.\} and Kim, \{C. S.\} and M. Kim and Merritt, \{C. D.\} and Meyer, \{J. R.\}",
year = "2012",
doi = "10.1117/12.910586",
language = "English",
isbn = "9780819489203",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Novel In-Plane Semiconductor Lasers XI",
note = "Novel In-Plane Semiconductor Lasers XI ; Conference date: 23-01-2012 Through 26-01-2012",
}