High-power 2.3 μm laser arrays emitting 10 W CW at room temperature

G. L. Belenky; J. G. Kim; L. Shterengas; A. Gourevitch; R. U. Martinelli

doi:10.1049/el:20040532

High-power 2.3 μm laser arrays emitting 10 W CW at room temperature

G. L. Belenky
, J. G. Kim
, L. Shterengas
, A. Gourevitch
, R. U. Martinelli

Electrical Engineering

Stony Brook University

Stony Brook University
Sarnoff Corporation

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

High-power 2.3 μm In(Al)GaAsSb/GaSb type-I double quantum-well diode laser arrays have been fabricated and characterised. Linear laser arrays with 19 100 μm-wide elements on a 1 cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 μs/300 Hz) at a heatsink temperature of 18°C.

Original language	English
Pages (from-to)	737-738
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	12
DOIs	https://doi.org/10.1049/el:20040532
State	Published - Jun 10 2004

Access to Document

10.1049/el:20040532

Cite this

@article{dbbb266acab74d8685b452b1b510d761,

title = "High-power 2.3 μm laser arrays emitting 10 W CW at room temperature",

abstract = "High-power 2.3 μm In(Al)GaAsSb/GaSb type-I double quantum-well diode laser arrays have been fabricated and characterised. Linear laser arrays with 19 100 μm-wide elements on a 1 cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 μs/300 Hz) at a heatsink temperature of 18°C.",

author = "Belenky, \{G. L.\} and Kim, \{J. G.\} and L. Shterengas and A. Gourevitch and Martinelli, \{R. U.\}",

year = "2004",

month = jun,

day = "10",

doi = "10.1049/el:20040532",

language = "English",

volume = "40",

pages = "737--738",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "12",

}

TY - JOUR

T1 - High-power 2.3 μm laser arrays emitting 10 W CW at room temperature

AU - Belenky, G. L.

AU - Kim, J. G.

AU - Shterengas, L.

AU - Gourevitch, A.

AU - Martinelli, R. U.

PY - 2004/6/10

Y1 - 2004/6/10

N2 - High-power 2.3 μm In(Al)GaAsSb/GaSb type-I double quantum-well diode laser arrays have been fabricated and characterised. Linear laser arrays with 19 100 μm-wide elements on a 1 cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 μs/300 Hz) at a heatsink temperature of 18°C.

AB - High-power 2.3 μm In(Al)GaAsSb/GaSb type-I double quantum-well diode laser arrays have been fabricated and characterised. Linear laser arrays with 19 100 μm-wide elements on a 1 cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 μs/300 Hz) at a heatsink temperature of 18°C.

UR - https://www.scopus.com/pages/publications/3042548292

U2 - 10.1049/el:20040532

DO - 10.1049/el:20040532

M3 - Article

SN - 0013-5194

VL - 40

SP - 737

EP - 738

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

High-power 2.3 μm laser arrays emitting 10 W CW at room temperature

Abstract

Access to Document

Other files and links

Fingerprint

Cite this