@inproceedings{aef662fa07fc4dc99d4c1c2b6cb54788,
title = "High quality 100 mm 4H-SiC substrate",
abstract = "High-quality 100 mm 4H-SiC boules were grown using the physical vapor transport (PVT) method with optimized growth parameters. Micro-Raman spectroscopy measurement shows that the 4H-SiC polytype of the entire wafer is uniform. The micropipe density is measured to be less than 1cm-2. The 1c threading screw dislocation (TSD) density can be suppressed to the magnitude of 102 cm-2. After chemical mechanical polishing (CMP), it is found that the warp of the substrate is less than 10 μm, and the surface roughness (Ra) is as low as 0.063 nm.",
keywords = "4H-SiC, Dislocation, Silicon carbide, Substrate",
author = "Gao, \{Yu Qiang\} and Zhang, \{Hong Yan\} and Jian Song and Sheng Song and Liang, \{Qing Rui\} and Min Ning and Chao Gao and Wang, \{Xi Jie\} and Zong, \{Yan Min\} and Wang, \{Huan Huan\} and Michael Dudley",
note = "Publisher Copyright: {\textcopyright} (2015) Trans Tech Publications, Switzerland.; European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 ; Conference date: 21-09-2014 Through 25-09-2014",
year = "2015",
doi = "10.4028/www.scientific.net/MSF.821-823.51",
language = "English",
isbn = "9783038354789",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "51--55",
editor = "Didier Chaussende and Gabriel Ferro",
booktitle = "Silicon Carbide and Related Materials 2014",
}