High quantum efficiency Schottky diode photodetector on the base of ultrathin GaAs-on-Si film

V. A. Joshkin; V. N. Pavlenko; A. V. Kvit; S. R. Oktyabrsky

doi:10.1063/1.361374

High quantum efficiency Schottky diode photodetector on the base of ultrathin GaAs-on-Si film

V. A. Joshkin
, V. N. Pavlenko
, A. V. Kvit
, S. R. Oktyabrsky

Nanoscale Science and Engineering

University at Albany

Moscow Institute of Physics and Technology
P.N. Lebedev Physical Institute of the Russian Academy of Sciences

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A new type of a Schottky diode photodetector based on the ultrathin (10 nm) low-temperature grown GaAs-on-Si heterolayer was fabricated and studied. Properties of the heterostructure and electrical characteristics of the photodetector were determined using low-temperature photoluminescence, high-resolution transmission electron microscopy, capacitance-voltage, current-voltage, and spectral responsivity measurements. The high responsivity of the photodetector (corresponding to external quantum efficiency of 0.8-0.9) is explained by effective carriers separation in the GaAs layer and by the carrier multiplication effect at the GaAs/Si interface.

Original language	English
Pages (from-to)	3774-3777
Number of pages	4
Journal	Journal of Applied Physics
Volume	79
Issue number	7
DOIs	https://doi.org/10.1063/1.361374
State	Published - Apr 1 1996

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title = "High quantum efficiency Schottky diode photodetector on the base of ultrathin GaAs-on-Si film",

abstract = "A new type of a Schottky diode photodetector based on the ultrathin (10 nm) low-temperature grown GaAs-on-Si heterolayer was fabricated and studied. Properties of the heterostructure and electrical characteristics of the photodetector were determined using low-temperature photoluminescence, high-resolution transmission electron microscopy, capacitance-voltage, current-voltage, and spectral responsivity measurements. The high responsivity of the photodetector (corresponding to external quantum efficiency of 0.8-0.9) is explained by effective carriers separation in the GaAs layer and by the carrier multiplication effect at the GaAs/Si interface.",

author = "Joshkin, \{V. A.\} and Pavlenko, \{V. N.\} and Kvit, \{A. V.\} and Oktyabrsky, \{S. R.\}",

year = "1996",

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T1 - High quantum efficiency Schottky diode photodetector on the base of ultrathin GaAs-on-Si film

AU - Joshkin, V. A.

AU - Pavlenko, V. N.

AU - Kvit, A. V.

AU - Oktyabrsky, S. R.

PY - 1996/4/1

Y1 - 1996/4/1

N2 - A new type of a Schottky diode photodetector based on the ultrathin (10 nm) low-temperature grown GaAs-on-Si heterolayer was fabricated and studied. Properties of the heterostructure and electrical characteristics of the photodetector were determined using low-temperature photoluminescence, high-resolution transmission electron microscopy, capacitance-voltage, current-voltage, and spectral responsivity measurements. The high responsivity of the photodetector (corresponding to external quantum efficiency of 0.8-0.9) is explained by effective carriers separation in the GaAs layer and by the carrier multiplication effect at the GaAs/Si interface.

AB - A new type of a Schottky diode photodetector based on the ultrathin (10 nm) low-temperature grown GaAs-on-Si heterolayer was fabricated and studied. Properties of the heterostructure and electrical characteristics of the photodetector were determined using low-temperature photoluminescence, high-resolution transmission electron microscopy, capacitance-voltage, current-voltage, and spectral responsivity measurements. The high responsivity of the photodetector (corresponding to external quantum efficiency of 0.8-0.9) is explained by effective carriers separation in the GaAs layer and by the carrier multiplication effect at the GaAs/Si interface.

UR - https://www.scopus.com/pages/publications/0030125891

U2 - 10.1063/1.361374

DO - 10.1063/1.361374

M3 - Article

SN - 0021-8979

VL - 79

SP - 3774

EP - 3777

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

High quantum efficiency Schottky diode photodetector on the base of ultrathin GaAs-on-Si film

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