Hot electron transport studies of the Cu/Si(001) interface using ballistic electron emission microscopy

J. J. Garramone; J. R. Abel; I. L. Sitnitsky; R. L. Moore; V. P. Labella

doi:10.1116/1.3136761

Hot electron transport studies of the Cu/Si(001) interface using ballistic electron emission microscopy

J. J. Garramone
, J. R. Abel
, I. L. Sitnitsky
, R. L. Moore
, V. P. Labella

Nanoscale Science and Engineering

University at Albany

State University of New York (SUNY)

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The hot electron transport properties of the Cu/Si(001) interface have been studied using ballistic electron emission microscopy (BEEM). The Schottky barrier height was measured to be 0.64±0.02 eV. The scanning tunneling microscopy images provide evidence of Volmer-Weber growth of the metal, while Rutherford backscattering spectrometry data corroborated with Auger depth profiling indicate distinct Cu and Si regions with little intermixing. Comparison with Au/Si(001) BEEM data provides some insight into the hot electron transport and scattering properties of the Cu/Si(001) interface.

Original language	English
Pages (from-to)	2044-2047
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	4
DOIs	https://doi.org/10.1116/1.3136761
State	Published - 2009

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title = "Hot electron transport studies of the Cu/Si(001) interface using ballistic electron emission microscopy",

abstract = "The hot electron transport properties of the Cu/Si(001) interface have been studied using ballistic electron emission microscopy (BEEM). The Schottky barrier height was measured to be 0.64±0.02 eV. The scanning tunneling microscopy images provide evidence of Volmer-Weber growth of the metal, while Rutherford backscattering spectrometry data corroborated with Auger depth profiling indicate distinct Cu and Si regions with little intermixing. Comparison with Au/Si(001) BEEM data provides some insight into the hot electron transport and scattering properties of the Cu/Si(001) interface.",

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year = "2009",

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T1 - Hot electron transport studies of the Cu/Si(001) interface using ballistic electron emission microscopy

AU - Garramone, J. J.

AU - Abel, J. R.

AU - Sitnitsky, I. L.

AU - Moore, R. L.

AU - Labella, V. P.

PY - 2009

Y1 - 2009

N2 - The hot electron transport properties of the Cu/Si(001) interface have been studied using ballistic electron emission microscopy (BEEM). The Schottky barrier height was measured to be 0.64±0.02 eV. The scanning tunneling microscopy images provide evidence of Volmer-Weber growth of the metal, while Rutherford backscattering spectrometry data corroborated with Auger depth profiling indicate distinct Cu and Si regions with little intermixing. Comparison with Au/Si(001) BEEM data provides some insight into the hot electron transport and scattering properties of the Cu/Si(001) interface.

AB - The hot electron transport properties of the Cu/Si(001) interface have been studied using ballistic electron emission microscopy (BEEM). The Schottky barrier height was measured to be 0.64±0.02 eV. The scanning tunneling microscopy images provide evidence of Volmer-Weber growth of the metal, while Rutherford backscattering spectrometry data corroborated with Auger depth profiling indicate distinct Cu and Si regions with little intermixing. Comparison with Au/Si(001) BEEM data provides some insight into the hot electron transport and scattering properties of the Cu/Si(001) interface.

UR - https://www.scopus.com/pages/publications/68349127561

U2 - 10.1116/1.3136761

DO - 10.1116/1.3136761

M3 - Article

SN - 1071-1023

VL - 27

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Hot electron transport studies of the Cu/Si(001) interface using ballistic electron emission microscopy

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