Abstract
We report on the fabrication and characterization of III-nitride layered tunnel barriers with applications for a new type of tunable hyperspectral imaging detector with intrinsically hyperspectral pixels. This would enable each pixel to be individually tunable in real-time through a range of wavelengths, with the number and width of spectral channels being dynamically adjustable. Shape-engineered electron barriers fabricated from III-nitride heterostructures allow barrier height to be varied by application of a voltage. A spectroscopy of photon wavelength is enabled via the collection of photoexcited electrons across this barrier. The device is envisioned for tunable detection of ultraviolet through infrared wavelengths.
| Original language | English |
|---|---|
| Article number | 4529167 |
| Pages (from-to) | 724-729 |
| Number of pages | 6 |
| Journal | IEEE Sensors Journal |
| Volume | 8 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 2008 |
Keywords
- Dielectric films
- Transducers
- Tunneling
- Ultraviolet detectors
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