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Impact of collector-base junction traps and high injection barrier effect on 1/f noise

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3 Scopus citations

Abstract

This work investigates the impact of CB junction traps and high injection barrier effect on 1/f noise in SiGe HBTs. By comparing the 1/f noise of standard and high breakdown voltage HBTs, we show that the collector-base junction traps result in not only a higher IB, but also higher base current 1/f noise at high injection. The base current 1/f noise level remains proportional to IB2.

Original languageEnglish
Pages175-178
Number of pages4
StatePublished - 2003
EventProceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting - Toulouse, France
Duration: Sep 28 2003Sep 30 2003

Conference

ConferenceProceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting
Country/TerritoryFrance
CityToulouse
Period09/28/0309/30/03

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