Abstract
This work investigates the impact of CB junction traps and high injection barrier effect on 1/f noise in SiGe HBTs. By comparing the 1/f noise of standard and high breakdown voltage HBTs, we show that the collector-base junction traps result in not only a higher IB, but also higher base current 1/f noise at high injection. The base current 1/f noise level remains proportional to IB2.
| Original language | English |
|---|---|
| Pages | 175-178 |
| Number of pages | 4 |
| State | Published - 2003 |
| Event | Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting - Toulouse, France Duration: Sep 28 2003 → Sep 30 2003 |
Conference
| Conference | Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting |
|---|---|
| Country/Territory | France |
| City | Toulouse |
| Period | 09/28/03 → 09/30/03 |
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