Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs

S. J. Jeng; D. C. Ahlgren; O. D. Berg; B. Ebersman; G. Freeman; D. R. Greenberg; J. Malinowski; D. Nguyen-Ngoc; K. T. Schonenberg; K. J. Stein; D. Colavito; M. Longstreet; P. Ronsheim; S. Subbanna; D. L. Harame

Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs

S. J. Jeng
, D. C. Ahlgren
, O. D. Berg
, B. Ebersman
, G. Freeman
, D. R. Greenberg
, J. Malinowski
, D. Nguyen-Ngoc
, K. T. Schonenberg
, K. J. Stein
, D. Colavito
, M. Longstreet
, P. Ronsheim
, S. Subbanna
, D. L. Harame

NY Creates Research Foundation

NY Creates

Global Foundries, Inc.

Research output: Contribution to conference › Paper › peer-review

4 Scopus citations

Abstract

We have explored the process window for the polysilicon resistor in the self-aligned SiGe epi-base HBT process utilizing various structure and implant conditions. We have performed a systematic study on the effects of implant energy, dosage, and polysilicon structure on the polysilicon resistor, p-i-n diode, and NPN performance. We find that the properties of this resistor can be controlled via the implant conditions, while leaving key HBT figures of merit such as f_T, f_max virtually unchanged. We also demonstrate conditions resulting in a precision, low TCR resistor.

Original language	English
Pages	187-190
Number of pages	4
State	Published - 1997
Event	Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA Duration: Sep 28 1997 → Sep 30 1997

Conference

Conference	Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting
City	Minneapolis, MN, USA
Period	09/28/97 → 09/30/97

Cite this

Jeng, S. J., Ahlgren, D. C., Berg, O. D., Ebersman, B., Freeman, G., Greenberg, D. R., Malinowski, J., Nguyen-Ngoc, D., Schonenberg, K. T., Stein, K. J., Colavito, D., Longstreet, M., Ronsheim, P., Subbanna, S., & Harame, D. L. (1997). Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs. 187-190. Paper presented at Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA.

@conference{5b730dd6f08a4663a0b029a80361599b,

title = "Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs",

abstract = "We have explored the process window for the polysilicon resistor in the self-aligned SiGe epi-base HBT process utilizing various structure and implant conditions. We have performed a systematic study on the effects of implant energy, dosage, and polysilicon structure on the polysilicon resistor, p-i-n diode, and NPN performance. We find that the properties of this resistor can be controlled via the implant conditions, while leaving key HBT figures of merit such as fT, fmax virtually unchanged. We also demonstrate conditions resulting in a precision, low TCR resistor.",

author = "Jeng, \{S. J.\} and Ahlgren, \{D. C.\} and Berg, \{O. D.\} and B. Ebersman and G. Freeman and Greenberg, \{D. R.\} and J. Malinowski and D. Nguyen-Ngoc and Schonenberg, \{K. T.\} and Stein, \{K. J.\} and D. Colavito and M. Longstreet and P. Ronsheim and S. Subbanna and Harame, \{D. L.\}",

year = "1997",

language = "English",

pages = "187--190",

note = "Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting ; Conference date: 28-09-1997 Through 30-09-1997",

}

Jeng, SJ, Ahlgren, DC, Berg, OD, Ebersman, B, Freeman, G, Greenberg, DR, Malinowski, J, Nguyen-Ngoc, D, Schonenberg, KT, Stein, KJ, Colavito, D, Longstreet, M, Ronsheim, P, Subbanna, S & Harame, DL 1997, 'Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs', Paper presented at Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, 09/28/97 - 09/30/97 pp. 187-190.

TY - CONF

T1 - Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs

AU - Jeng, S. J.

AU - Ahlgren, D. C.

AU - Berg, O. D.

AU - Ebersman, B.

AU - Freeman, G.

AU - Greenberg, D. R.

AU - Malinowski, J.

AU - Nguyen-Ngoc, D.

AU - Schonenberg, K. T.

AU - Stein, K. J.

AU - Colavito, D.

AU - Longstreet, M.

AU - Ronsheim, P.

AU - Subbanna, S.

AU - Harame, D. L.

PY - 1997

Y1 - 1997

N2 - We have explored the process window for the polysilicon resistor in the self-aligned SiGe epi-base HBT process utilizing various structure and implant conditions. We have performed a systematic study on the effects of implant energy, dosage, and polysilicon structure on the polysilicon resistor, p-i-n diode, and NPN performance. We find that the properties of this resistor can be controlled via the implant conditions, while leaving key HBT figures of merit such as fT, fmax virtually unchanged. We also demonstrate conditions resulting in a precision, low TCR resistor.

AB - We have explored the process window for the polysilicon resistor in the self-aligned SiGe epi-base HBT process utilizing various structure and implant conditions. We have performed a systematic study on the effects of implant energy, dosage, and polysilicon structure on the polysilicon resistor, p-i-n diode, and NPN performance. We find that the properties of this resistor can be controlled via the implant conditions, while leaving key HBT figures of merit such as fT, fmax virtually unchanged. We also demonstrate conditions resulting in a precision, low TCR resistor.

UR - https://www.scopus.com/pages/publications/0031379773

M3 - Paper

SP - 187

EP - 190

T2 - Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting

Y2 - 28 September 1997 through 30 September 1997

ER -

Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs

Abstract

Conference

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