TY - GEN
T1 - Impact of Switching Variability, Memory Window, and Temperature on Vector Matrix Operations Using 65nm CMOS Integrated Hafnium Dioxide-based ReRAM Devices
AU - Liehr, Maximilian
AU - Beckmann, Karsten
AU - Cady, Nathaniel
N1 - Publisher Copyright: © 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Neuromorphic applications utilizing Non-Volatile Memory (NVM) devices have significant potential in imitating the functionality of biological synapses at lower power and area consumption than conventional CMOS. One such NVM candidate is Resistive Random Access Memory (ReRAM) devices utilizing transition metal oxides, such as hafnium oxide (HfO2) as the switching layer. These devices, while able to operate at multiple distinct levels, can suffer from key reliability issues. In this work we explored the use of our unique ReRAM-CMOS hybrid system to recognize images from the Caltech-101 dataset through image similarity processing. The approach utilized vector matrix multiplication (VMM) to correlate image similarity (or difference) between images. The effects of ReRAM switching variability, memory window (MW) and temperature were assessed for performance of VMM-based image recognition.
AB - Neuromorphic applications utilizing Non-Volatile Memory (NVM) devices have significant potential in imitating the functionality of biological synapses at lower power and area consumption than conventional CMOS. One such NVM candidate is Resistive Random Access Memory (ReRAM) devices utilizing transition metal oxides, such as hafnium oxide (HfO2) as the switching layer. These devices, while able to operate at multiple distinct levels, can suffer from key reliability issues. In this work we explored the use of our unique ReRAM-CMOS hybrid system to recognize images from the Caltech-101 dataset through image similarity processing. The approach utilized vector matrix multiplication (VMM) to correlate image similarity (or difference) between images. The effects of ReRAM switching variability, memory window (MW) and temperature were assessed for performance of VMM-based image recognition.
KW - ReRAM
KW - Reliability
KW - Switching Variability
KW - Vector Matrix Multiplication
UR - https://www.scopus.com/pages/publications/85136080570
U2 - 10.1109/MDTS54894.2022.9826924
DO - 10.1109/MDTS54894.2022.9826924
M3 - Conference contribution
T3 - 2022 IEEE Microelectronics Design and Test Symposium, MDTS 2022
BT - 2022 IEEE Microelectronics Design and Test Symposium, MDTS 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 31st IEEE Microelectronics Design and Test Symposium, MDTS 2022
Y2 - 23 May 2022 through 26 May 2022
ER -