Improved frequency response in a SiGe npn device through improved dopant activation

J. W. Adkisson; M. H. Khater; J. P. Gambino; P. Cheng; V. Jain; R. A. Camillo-Castillo; C. Lavoie; A. K. Sutton; O. Gluschenkov; Q. Z. Liu; T. L. McDevitt; S. U. Engelmann; J. J. Pekarik; D. L. Harame

doi:10.1149/05009.0083ecst

Improved frequency response in a SiGe npn device through improved dopant activation

J. W. Adkisson
, M. H. Khater
, J. P. Gambino
, P. Cheng
, V. Jain
, R. A. Camillo-Castillo
, C. Lavoie
, A. K. Sutton
, O. Gluschenkov
, Q. Z. Liu
, T. L. McDevitt
, S. U. Engelmann
, J. J. Pekarik
, D. L. Harame

NY Creates Research Foundation

NY Creates

Global Foundries, Inc.
IBM

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We study the impact of improved dopant activation in a BiCMOS SiGe technology, using laser annealing to improve activation, and a low temperature contact module to avoid de-activation. We present the results of simple DC test structure measurements and high frequency bipolar transistor measurements. Improved activation significantly reduces sheet resistance, particularly for polysilicon layers. Likewise, reductions in the bipolar device resistance parasitics cause an improvement in maximum power gain frequency (f _MAX).

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	83-93
Number of pages	11
Edition	9
ISBN (Print)	9781607683575
DOIs	https://doi.org/10.1149/05009.0083ecst
State	Published - 2013
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: Oct 7 2012 → Oct 12 2012

Publication series

Name	ECS Transactions
Number	9
Volume	50

Conference

Conference	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	10/7/12 → 10/12/12

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10.1149/05009.0083ecst

Cite this

Adkisson, J. W., Khater, M. H., Gambino, J. P., Cheng, P., Jain, V., Camillo-Castillo, R. A., Lavoie, C., Sutton, A. K., Gluschenkov, O., Liu, Q. Z., McDevitt, T. L., Engelmann, S. U., Pekarik, J. J., & Harame, D. L. (2013). Improved frequency response in a SiGe npn device through improved dopant activation. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 ed., pp. 83-93). (ECS Transactions; Vol. 50, No. 9). Electrochemical Society Inc.. https://doi.org/10.1149/05009.0083ecst

@inproceedings{7a5d30a723e241e5bfd4c16cec18884f,

title = "Improved frequency response in a SiGe npn device through improved dopant activation",

abstract = "We study the impact of improved dopant activation in a BiCMOS SiGe technology, using laser annealing to improve activation, and a low temperature contact module to avoid de-activation. We present the results of simple DC test structure measurements and high frequency bipolar transistor measurements. Improved activation significantly reduces sheet resistance, particularly for polysilicon layers. Likewise, reductions in the bipolar device resistance parasitics cause an improvement in maximum power gain frequency (f MAX).",

author = "Adkisson, \{J. W.\} and Khater, \{M. H.\} and Gambino, \{J. P.\} and P. Cheng and V. Jain and Camillo-Castillo, \{R. A.\} and C. Lavoie and Sutton, \{A. K.\} and O. Gluschenkov and Liu, \{Q. Z.\} and McDevitt, \{T. L.\} and Engelmann, \{S. U.\} and Pekarik, \{J. J.\} and Harame, \{D. L.\}",

year = "2013",

doi = "10.1149/05009.0083ecst",

language = "English",

isbn = "9781607683575",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "9",

pages = "83--93",

booktitle = "SiGe, Ge, and Related Compounds 5",

edition = "9",

note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",

}

Adkisson, JW, Khater, MH, Gambino, JP, Cheng, P, Jain, V, Camillo-Castillo, RA, Lavoie, C, Sutton, AK, Gluschenkov, O, Liu, QZ, McDevitt, TL, Engelmann, SU, Pekarik, JJ & Harame, DL 2013, Improved frequency response in a SiGe npn device through improved dopant activation. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, Electrochemical Society Inc., pp. 83-93, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 10/7/12. https://doi.org/10.1149/05009.0083ecst

Improved frequency response in a SiGe npn device through improved dopant activation. / Adkisson, J. W.; Khater, M. H.; Gambino, J. P. et al.
SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. Electrochemical Society Inc., 2013. p. 83-93 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved frequency response in a SiGe npn device through improved dopant activation

AU - Adkisson, J. W.

AU - Khater, M. H.

AU - Gambino, J. P.

AU - Cheng, P.

AU - Jain, V.

AU - Camillo-Castillo, R. A.

AU - Lavoie, C.

AU - Sutton, A. K.

AU - Gluschenkov, O.

AU - Liu, Q. Z.

AU - McDevitt, T. L.

AU - Engelmann, S. U.

AU - Pekarik, J. J.

AU - Harame, D. L.

PY - 2013

Y1 - 2013

N2 - We study the impact of improved dopant activation in a BiCMOS SiGe technology, using laser annealing to improve activation, and a low temperature contact module to avoid de-activation. We present the results of simple DC test structure measurements and high frequency bipolar transistor measurements. Improved activation significantly reduces sheet resistance, particularly for polysilicon layers. Likewise, reductions in the bipolar device resistance parasitics cause an improvement in maximum power gain frequency (f MAX).

AB - We study the impact of improved dopant activation in a BiCMOS SiGe technology, using laser annealing to improve activation, and a low temperature contact module to avoid de-activation. We present the results of simple DC test structure measurements and high frequency bipolar transistor measurements. Improved activation significantly reduces sheet resistance, particularly for polysilicon layers. Likewise, reductions in the bipolar device resistance parasitics cause an improvement in maximum power gain frequency (f MAX).

UR - https://www.scopus.com/pages/publications/84885794984

U2 - 10.1149/05009.0083ecst

DO - 10.1149/05009.0083ecst

M3 - Conference contribution

SN - 9781607683575

T3 - ECS Transactions

SP - 83

EP - 93

BT - SiGe, Ge, and Related Compounds 5

PB - Electrochemical Society Inc.

T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting

Y2 - 7 October 2012 through 12 October 2012

ER -

Improved frequency response in a SiGe npn device through improved dopant activation

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