Improved gain and loss performance of 1.3 μm quantum dot lasers using high growth temperature GaAs spacer layer

C. L. Walker; I. C. Sandall; P. M. Smowton; I. R. Sellers; D. J. Mowbray; H. Y. Liu; M. Hopkinson

Improved gain and loss performance of 1.3 μm quantum dot lasers using high growth temperature GaAs spacer layer

C. L. Walker
, I. C. Sandall
, P. M. Smowton
, I. R. Sellers
, D. J. Mowbray
, H. Y. Liu
, M. Hopkinson

Department of Electrical Engineering

University at Buffalo

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate improved gain and loss performance of 1.3 μm In(Ga)As quantum dot laser material using high growth temperature spacer layers to reduce the internal loss and inhomogeneous broadening, and improve the efficiency.

Original language	English
Pages (from-to)	212-213
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
State	Published - 2004
Event	2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico Duration: Nov 7 2004 → Nov 11 2004

Cite this

@article{bc25b06f9e304bf892fda90943ee51b8,

title = "Improved gain and loss performance of 1.3 μm quantum dot lasers using high growth temperature GaAs spacer layer",

abstract = "We demonstrate improved gain and loss performance of 1.3 μm In(Ga)As quantum dot laser material using high growth temperature spacer layers to reduce the internal loss and inhomogeneous broadening, and improve the efficiency.",

author = "Walker, \{C. L.\} and Sandall, \{I. C.\} and Smowton, \{P. M.\} and Sellers, \{I. R.\} and Mowbray, \{D. J.\} and Liu, \{H. Y.\} and M. Hopkinson",

year = "2004",

language = "English",

volume = "1",

pages = "212--213",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 ; Conference date: 07-11-2004 Through 11-11-2004",

}

TY - JOUR

T1 - Improved gain and loss performance of 1.3 μm quantum dot lasers using high growth temperature GaAs spacer layer

AU - Walker, C. L.

AU - Sandall, I. C.

AU - Smowton, P. M.

AU - Sellers, I. R.

AU - Mowbray, D. J.

AU - Liu, H. Y.

AU - Hopkinson, M.

PY - 2004

Y1 - 2004

N2 - We demonstrate improved gain and loss performance of 1.3 μm In(Ga)As quantum dot laser material using high growth temperature spacer layers to reduce the internal loss and inhomogeneous broadening, and improve the efficiency.

AB - We demonstrate improved gain and loss performance of 1.3 μm In(Ga)As quantum dot laser material using high growth temperature spacer layers to reduce the internal loss and inhomogeneous broadening, and improve the efficiency.

UR - https://www.scopus.com/pages/publications/14244255823

M3 - Conference article

SN - 1092-8081

VL - 1

SP - 212

EP - 213

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004

Y2 - 7 November 2004 through 11 November 2004

ER -

Improved gain and loss performance of 1.3 μm quantum dot lasers using high growth temperature GaAs spacer layer

Abstract

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