Improved low resistance contacts of Ni/Au and Pd/Au to p-Type GaN using a cryogenic treatment

A low resistance Ohmic contact to p-type GaN is essential for reliable operation of electronic and optoelectronic devices. Such contacts have been made using Ni/Au and Pd/Au contacts to p-type Mg-doped GaN (1. 41×10 ¹⁷ cm ^-3) grown by metalorganic chemical vapor deposition ( MOCVD ) on ( 0001 ) sapphire substrates. Thermal evaporation was used for the deposition of those metals followed by annealing at temperatures of 400 ∼ 700 °C in an oxygen and nitrogen mixed gas ambient, then subsequently cooled in liquid nitrogen which reduced the specific contact resistance from the range of 9. 46~2. 80×10 ^-2 iicm ² to 9. 84-2. 65×10 ^-4 Hem ² for Ni/Au and from the range of 8. 35-5. 01×10 ^-4 ncm ² to 3. 34-1. 80×10 ^-4 Qcnr for Pd/Au. The electrical characteristics for the contacts were examined by the current versus voltage curves and the specific contact resistance was determined by use of the circular transmission line method (cTLM). The effects of the cryogenic process on improving Ohmic behavior (I-V linearity) and reducing the specific contact resistance will be discussed from a microstructural analysis which reveals the metallurgy of Ohmic contact formation.